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Transparent and Flexible Copper Iodide Resistive Memories Processed with a Dissolution-Recrystallization Solution Technique

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Title
Transparent and Flexible Copper Iodide Resistive Memories Processed with a Dissolution-Recrystallization Solution Technique
Author(s)
Bala, Arindam; Pujar, Pavan; Debottam Daw; Cho, Yongin; Naqi, Muhammad; Cho, Haewon; Gandla, Srinivas; Kim, Sunkook
Publication Date
2022-08
Journal
ACS APPLIED ELECTRONIC MATERIALS, v.4, no.8, pp.3973 - 3979
Publisher
AMER CHEMICAL SOC
Abstract
Copyright © 2022 American Chemical Society. This study explores a class of resistive memory candidates -simple binary halides -and demonstrates their efficacy in switching between high-and low-resistive states. Herein, copper halide, particularly copper iodide (CuI), is investigated for its resistive switching efficacy when sandwiched between indium tin oxide (ITO) and silver electrodes on flexible polyethylene terephthalate (PET) substrates. CuI is deposited on ITO-coated PET using an innovative dissolution-recrystallization technique, in which a deposition temperature of 80 & DEG;C is sufficient to eliminate the carrier solvent-acetonitrile-and impart considerable densification of CuI for effective memory characteristics. The PET/ ITO/CuI is transparent (> 90%), and the PET//ITO/CuI/Ag devices display states of notably low-and high-resistive states with a ratio of more than 10 within a voltage biasing range of -2.5 to +2.5 V. Additionally, the devices exhibit similar resistive states under bending stress. Halides (in particular, CuI) are, thus, introduced as a class of active materials for transparent and flexible resistive memories.
URI
https://pr.ibs.re.kr/handle/8788114/12375
DOI
10.1021/acsaelm.2c00614
ISSN
2637-6113
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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