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Defect-Engineered Magnetic Field Dependent Optoelectronics of Vanadium Doped Tungsten Diselenide Monolayers

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Title
Defect-Engineered Magnetic Field Dependent Optoelectronics of Vanadium Doped Tungsten Diselenide Monolayers
Author(s)
Nisi, Katharina; Kiemle, Jonas; Powalla, Lukas; Scavuzzo, Alessio; Tuan Dung Nguyen; Taniguchi, Takashi; Watanabe, Kenji; Dinh Loc Duong; Burghard, Marko; Holleitner, Alexander W.; Kastl, Christoph
Publication Date
2022-09
Journal
Advanced Optical Materials, v.10, no.17
Publisher
John Wiley and Sons Inc
Abstract
© 2022 The Authors. Advanced Optical Materials published by Wiley-VCH GmbH.The ability to dope transition metal dichalcogenides such as tungsten diselenide (WSe2) with magnetic transition metal atoms in a controlled manner has motivated intense research with the aim of generating dilute magnetic semiconductors. In this work, semiconducting WSe2 monolayers, substitutionally doped with vanadium atoms, are investigated using low-temperature luminescence and optoelectronic spectroscopy. V-dopants lead to a p-type doping character and an impurity-related emission ≈160 meV below the neutral exciton, both of which scale with the nominal percentage of V-dopants. Measurements using field-effect devices of 0.3% V-doped WSe2 demonstrate bipolar carrier tunability. The doped monolayers display a clear magnetic hysteresis in transport measurements both under illumination and without illumination, whereas the valley polarization of the excitons reveals a nonlinear g-factor without a magnetic hysteresis within the experimental uncertainty. Hence, this work on V-doped WSe2 provides crucial insights concerning suitable characterization methods on magnetic properties of doped 2D materials.
URI
https://pr.ibs.re.kr/handle/8788114/12369
DOI
10.1002/adom.202102711
ISSN
2195-1071
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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