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나노 구조 물리 연구단
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Suspended single-layer MoS2 devices

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Title
Suspended single-layer MoS2 devices
Author(s)
Taiyu Jin; Jinyeong Kang; Kim, ES; Sunhee Lee; Changgu Lee
Publication Date
2013-10
Journal
JOURNAL OF APPLIED PHYSICS, v.114, no.16, pp.164509 -
Publisher
AMER INST PHYSICS
Abstract
We have fabricated and characterized suspended single-layer MoS2 devices to investigate the substrate effect on the electrical properties of MoS2. The MoS2 devices were fabricated on Si/SiO 2 first by using e-beam lithography and were suspended by etching away half of the SiO2 layer with buffered oxide etchant and drying them with critical point dryer. Compared with SiO2 substrate-supported devices, the suspended devices show 2-10 times of mobility and on/off ratio improvement. While measuring the electronic properties, we observed that the suspended devices were annealed by joule heating and showed the performance improvement, whereas the supported devices did not. Our observations reveal that MoS2 devices are substrate-sensitive in their electrical properties and that proper substrates and cleaning is necessary for the optimal device performance. © 2013 AIP Publishing LLC.
URI
http://pr.ibs.re.kr/handle/8788114/1226
DOI
10.1063/1.4827477
ISSN
0021-8979
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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