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WS2/GeSe/WS2 Bipolar Transistor-Based Chemical Sensor with Fast Response and Recovery Times

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Title
WS2/GeSe/WS2 Bipolar Transistor-Based Chemical Sensor with Fast Response and Recovery Times
Author(s)
Afzal, Amir Muhammad; Iqbal, Muhammad Zahir; Ghulam Dastgeer; Nazir, Ghazanfar; Mumtaz, Sohail; Usman, Muhammad; Eom, Jonghwa
Publication Date
2020-09
Journal
ACS Applied Materials and Interfaces, v.12, no.35, pp.39524 - 39532
Publisher
American Chemical Society
Abstract
Vertical heterostructures of transition-metal dichalcogenide semiconductors have attracted considerable attention and offer new opportunities in electronics and optoelectronics for the development of innovative and multifunctional devices. Here, we designed a novel and compact vertically stacked two-dimensional (2D) n-WS2/p-GeSe/n-WS2 van der Waals (vdW) heterojunction bipolar transistor (2D-HBT)-based chemical sensor. The performance of the 2D-HBT vdW heterostructure with different base thicknesses is investigated by two configurations, namely, common-emitter and common-base configurations. The 2D-HBT vdW heterostructure exhibited intriguing electrical characteristics of current amplification with large gains of alpha approximate to 1.11 and beta approximate to 20.7. In addition, 2D-HBT-based devices have been investigated as chemical sensors for the detection of NH3 and O-2 gases at room temperature. The effects of different environments, such as air, vacuum, O-2, and NH3, were also analyzed in dark conditions, and with a light of 633 nm wavelength, ultrahigh sensitivity and fast response and recovery times (6.55 and 16.2 ms, respectively) were observed. These unprecedented outcomes have huge potential in modern technology in the development of low-power amplifiers and gas sensors.
URI
https://pr.ibs.re.kr/handle/8788114/12253
DOI
10.1021/acsami.0c05114
ISSN
1944-8244
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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