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Nanoscale Resistive Switching Schottky Contacts on Self-Assembled Pt Nanodots on SrTiO3

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Title
Nanoscale Resistive Switching Schottky Contacts on Self-Assembled Pt Nanodots on SrTiO3
Author(s)
Hyunsoo Lee; Haeri Kim; Trong Nghia Van; Dong-Wook Kim; Jeong Young Park
Publication Date
2013-11
Journal
ACS APPLIED MATERIALS & INTERFACES, v.5, no.22, pp.11668 - 11672
Publisher
AMER CHEMICAL SOC
Abstract
A nanoscale Schottky diode using Pt nanodisks on a Nb-doped SrTiO3 (Nb:STO) single crystal was fabricated, and resistive switching (RS) was demonstrated with conductive atomic force microscopy at ultrahigh vacuum. Pt disks with diameters on the order of 10 nm were formed using colloidal self-assembled patterns of silica nanospheres, followed by evaporation of the Pt layers on the Nb:STO single crystal. Here we show that the reproducible bipolar RS behavior of the nanoscale Pt/Nb:STO Schottky junction was achieved by utilizing local current-voltage spectroscopy. The conductance images, obtained simultaneously with topographic images, show the homogeneous current distribution of selected triangular-shaped Pt during repetitive resistive switching between the high-resistance state (HRS) and low-resistance state (LRS). The endurance characteristics of the Pt/Nb:STO junction exhibit reliable switching behavior. These results suggest that the rectifying and resistive Pt/Nb:STO junction can be scaled down to the 10 nm range and their position can be controlled.
URI
https://pr.ibs.re.kr/handle/8788114/1221
ISSN
1944-8244
Appears in Collections:
Center for Nanomaterials and Chemical Reactions(나노물질 및 화학반응 연구단) > Journal Papers (저널논문)
Files in This Item:
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