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나노 구조 물리 연구단
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Ultrafast biexciton spectroscopy in semiconductor quantum dots: Evidence for early emergence of multiple-exciton generation

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Title
Ultrafast biexciton spectroscopy in semiconductor quantum dots: Evidence for early emergence of multiple-exciton generation
Author(s)
Younghwan Choi; Sim S.; Seong Chu Lim; Young Hee Lee; Choi H.
Publication Date
2013-11
Journal
SCIENTIFIC REPORTS, v.3, no., pp.3206 -
Publisher
NATURE PUBLISHING GROUP
Abstract
Understanding multiple-exciton generation (MEG) in quantum dots (QDs) requires in-depth measurements of transient exciton dynamics. Because MEG typically faces competing ultrafast energy-loss intra-band relaxation, it is of central importance to investigate the emerging time-scale of the MEG kinetics. Here, we present ultrafast spectroscopic measurements of the MEG in PbS QDs via probing the ground-state biexciton transients. Specifically, we directly compare the biexciton spectra with the single-exciton ones before and after the intra-band relaxation. Early emergence of MEG is evidenced by observing transient Stark shift and quasi-instantaneous linewidth broadening, both of which take place before the intra-band relaxation. Photon-density-dependent study shows that the broadened biexciton linewidth strongly depends on the MEG-induced extra-exciton generation. Long after the intra-band relaxation, the biexciton broadening is small and the single-exciton state filling is dominant.
URI
http://pr.ibs.re.kr/handle/8788114/1212
DOI
10.1038/srep03206
ISSN
2045-2322
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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