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On the Role of Vapor Trapping for Chemical Vapor Deposition (CVD) Grown Graphene over Copper

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Title
On the Role of Vapor Trapping for Chemical Vapor Deposition (CVD) Grown Graphene over Copper
Author(s)
Mark H. Ruemmeli; Gorantla, Sandeep; Alicja Bachmatiuk; Phieler, Johannes; Geissler, Nicole; Ibrahim, Imad; Pang, Jinbo; Eckert, Juergen
Subject
Graphene, CVD, molecular decomposition, gas kinetics
Publication Date
2013-12
Journal
CHEMISTRY OF MATERIALS, v.25, no.24, pp.4861 - 4866
Publisher
AMER CHEMICAL SOC
Abstract
The role of sample chamber configuration for the chemical vapor deposition of graphene over copper was investigated in detail. A configuration in which the gas flow is unrestricted was shown to lead to graphene with an inhomogeneous number of layers (between 1 and 3). An alternative configuration in which one end of the inner tube (in which the sample is placed) is closed so as to restrict the gas flow leads a homogeneous graphene layer number. Depending on the sample placement, either homogeneous monolayer or bilayer graphene is obtained. Under our growth conditions, the data show local conditions play a role on layer homogeneity such that under quasi-static equilibrium gas conditions not only is the layer number stabilized, but the quality of the graphene improves. In short, our data suggests vapor trapping can trap Cu species leading to higher carbon concentrations, which determines layer number and improved decomposition of the carbon feedstock (CH4), which leads to higher quality graphene. © 2013 American Chemical Society.
URI
https://pr.ibs.re.kr/handle/8788114/1202
DOI
10.1021/cm401669k
ISSN
0897-4756
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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328_Chem_Mater_Cu_20131204.pdfDownload

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