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Correlation of Defect-Induced Photoluminescence and Raman Scattering in Monolayer WS2

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Title
Correlation of Defect-Induced Photoluminescence and Raman Scattering in Monolayer WS2
Author(s)
Jeong, Byeong Geun; Lee, Chanwoo; Kim, Sung Hyuk; Seok Joon Yun; Kim, Dong Hyeon; Lee, Juchan; Lee, Dongki; Ki Kang Kim; Lim, Seong Chu; Jeong, Mun Seok
Publication Date
2022-04
Journal
Journal of Physical Chemistry C, v.126, no.16, pp.7177 - 7183
Publisher
American Chemical Society
Abstract
Copyright © 2022 American Chemical Society. Defect investigation in two-dimensional transition-metal dichalcogenides (TMDs) is required because structural defects significantly affect the optical and electrical properties of TMD. Raman scattering can be an essential tool to study the defects in TMD, but defect-related Raman modes have been rarely studied. Here, we investigated the influence of sulfur vacancies and oxygen substitution on the optical properties of WS2 using the laser irradiation technique. The defect-induced photoluminescence (PL) exhibits distinct features depending on the type of defects, which shows different changes in the intensities and peak positions of the excitons, biexcitons, and defect-bound excitons. Defect-Activated Raman modes revealed information about the defects and demonstrated the origin of the alteration in PL. The defect analysis of TMDs based on the correlation between PL and Raman scattering provides a clear understanding of the variations in their optical properties.
URI
https://pr.ibs.re.kr/handle/8788114/11962
DOI
10.1021/acs.jpcc.2c01264
ISSN
1932-7447
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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