Impact of vacancy clusters on characteristic resistance change of nonstoichiometric strontium titanate nano-film

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Title
Impact of vacancy clusters on characteristic resistance change of nonstoichiometric strontium titanate nano-film
Author(s)
Yong Su Kim; Jiyeon Kim; Moon Jee Yoon; Chang Hee Sohn; Shin Buhm Lee; Daesu Lee; Byung Chul Jeon; Hyang Keun Yoo; Tae Won Noh; Bostwick, Aaron; Rotenberg, Eli; Yu, Jaejun; Bu, Sang Don; Mun, Bongjin Simon
Publication Date
2014-01
Journal
APPLIED PHYSICS LETTERS, v.104, no.1, pp.13501 -
Publisher
AMER INST PHYSICS
Abstract
In practical applications to bipolar resistance switching (BRS) memory devices with enhanced performance and high-scalability, oxide materials are commonly fabricated to highly nonstoichiometric and nanometer scale films. In this study, we fabricated ultrathin strontium titanate film, which shows two types of BRS behavior. By using micro-beam X-ray photoemission spectroscopy, the changes of core-level spectra depending on the resistance states are spatially resolved. Experimental and calculated results demonstrated that the fundamental switching mechanism in the two types of BRS is originated from the migration of anion and cation vacancies and the formation of insulating vacancy clusters near vicinity of the interface. (C) 2014 AIP Publishing LLC.
URI
https://pr.ibs.re.kr/handle/8788114/1158
ISSN
0003-6951
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > Journal Papers (저널논문)
Files in This Item:
APL 103, 212905 (2013)_Impact of vacancy clusters on characterisitic resistance.pdfDownload

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