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강상관계물질연구단
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Impact of vacancy clusters on characteristic resistance change of nonstoichiometric strontium titanate nano-film

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dc.contributor.authorYong Su Kim-
dc.contributor.authorJiyeon Kim-
dc.contributor.authorMoon Jee Yoon-
dc.contributor.authorChang Hee Sohn-
dc.contributor.authorShin Buhm Lee-
dc.contributor.authorDaesu Lee-
dc.contributor.authorByung Chul Jeon-
dc.contributor.authorHyang Keun Yoo-
dc.contributor.authorTae Won Noh-
dc.contributor.authorBostwick, Aaron-
dc.contributor.authorRotenberg, Eli-
dc.contributor.authorYu, Jaejun-
dc.contributor.authorBu, Sang Don-
dc.contributor.authorMun, Bongjin Simon-
dc.date.available2015-04-20T06:22:16Z-
dc.date.created2014-08-11-
dc.date.issued2014-01-
dc.identifier.issn0003-6951-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/1158-
dc.description.abstractIn practical applications to bipolar resistance switching (BRS) memory devices with enhanced performance and high-scalability, oxide materials are commonly fabricated to highly nonstoichiometric and nanometer scale films. In this study, we fabricated ultrathin strontium titanate film, which shows two types of BRS behavior. By using micro-beam X-ray photoemission spectroscopy, the changes of core-level spectra depending on the resistance states are spatially resolved. Experimental and calculated results demonstrated that the fundamental switching mechanism in the two types of BRS is originated from the migration of anion and cation vacancies and the formation of insulating vacancy clusters near vicinity of the interface. (C) 2014 AIP Publishing LLC.-
dc.description.uri1-
dc.language영어-
dc.publisherAMER INST PHYSICS-
dc.subjectRESISTIVE SWITCHING MEMORIES-
dc.subjectDOPED SRTIO3-
dc.subjectTHIN-FILMS-
dc.titleImpact of vacancy clusters on characteristic resistance change of nonstoichiometric strontium titanate nano-film-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000329838800088-
dc.identifier.scopusid2-s2.0-84892173879-
dc.identifier.rimsid220ko
dc.date.tcdate2018-10-01-
dc.contributor.affiliatedAuthorYong Su Kim-
dc.contributor.affiliatedAuthorMoon Jee Yoon-
dc.contributor.affiliatedAuthorChang Hee Sohn-
dc.contributor.affiliatedAuthorShin Buhm Lee-
dc.contributor.affiliatedAuthorDaesu Lee-
dc.contributor.affiliatedAuthorByung Chul Jeon-
dc.contributor.affiliatedAuthorHyang Keun Yoo-
dc.contributor.affiliatedAuthorTae Won Noh-
dc.identifier.doi10.1063/1.4860961-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.104, no.1, pp.13501-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume104-
dc.citation.number1-
dc.citation.startPage13501-
dc.date.scptcdate2018-10-01-
dc.description.wostc11-
dc.description.scptc12-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordPlusRESISTIVE SWITCHING MEMORIES-
dc.subject.keywordPlusDOPED SRTIO3-
dc.subject.keywordPlusTHIN-FILMS-
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > 1. Journal Papers (저널논문)
Files in This Item:
APL 103, 212905 (2013)_Impact of vacancy clusters on characterisitic resistance.pdfDownload

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