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Bistability of hydrogen in ZnO: Origin of doping limit and persistent photoconductivity

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Title
Bistability of hydrogen in ZnO: Origin of doping limit and persistent photoconductivity
Author(s)
Ho-Hyun Nahm; Park C.H.; Yong-Sung Kim
Publication Date
2014-02
Journal
SCIENTIFIC REPORTS, v.4, pp.4124
Publisher
NATURE PUBLISHING GROUP
Abstract
Substitutional hydrogen at oxygen site (H O) is well-known to be a robust source of n-type conductivity in ZnO, but a puzzling aspect is that the doping limit by hydrogen is only about 10 18 â€...cm -3, even if solubility limit is much higher. Another puzzling aspect of ZnO is persistent photoconductivity, which prevents the wide applications of the ZnO-based thin film transistor. Up to now, there is no satisfactory theory about two puzzles. We report the bistability of H O in ZnO through first-principles electronic structure calculations. We find that as Fermi level is close to conduction bands, the H O can undergo a large lattice relaxation, through which a deep level can be induced, capturing electrons and the deep state can be transformed into shallow donor state by a photon absorption. We suggest that the bistability can give explanations to two puzzling aspects.
URI
https://pr.ibs.re.kr/handle/8788114/1128
DOI
10.1038/srep04124
ISSN
2045-2322
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > 1. Journal Papers (저널논문)
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