Bistability of hydrogen in ZnO: Origin of doping limit and persistent photoconductivity

DC Field Value Language
dc.contributor.authorHo-Hyun Nahm-
dc.contributor.authorPark C.H.-
dc.contributor.authorYong-Sung Kim-
dc.date.available2015-04-20T06:15:39Z-
dc.date.created2014-08-11-
dc.date.issued2014-02-
dc.identifier.issn2045-2322-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/1128-
dc.description.abstractSubstitutional hydrogen at oxygen site (H O) is well-known to be a robust source of n-type conductivity in ZnO, but a puzzling aspect is that the doping limit by hydrogen is only about 10 18 â€...cm -3, even if solubility limit is much higher. Another puzzling aspect of ZnO is persistent photoconductivity, which prevents the wide applications of the ZnO-based thin film transistor. Up to now, there is no satisfactory theory about two puzzles. We report the bistability of H O in ZnO through first-principles electronic structure calculations. We find that as Fermi level is close to conduction bands, the H O can undergo a large lattice relaxation, through which a deep level can be induced, capturing electrons and the deep state can be transformed into shallow donor state by a photon absorption. We suggest that the bistability can give explanations to two puzzling aspects.-
dc.languageENG-
dc.publisherNATURE PUBLISHING GROUP-
dc.titleBistability of hydrogen in ZnO: Origin of doping limit and persistent photoconductivity-
dc.typeArticle-
dc.type.rimsA-
dc.identifier.wosid000331401100008-
dc.identifier.scopusid2-s2.0-84894334046-
dc.description.wostc22-
dc.date.tcdate2018-10-01-
dc.date.scptcdate2018-10-01-
dc.contributor.affiliatedAuthorHo-Hyun Nahm-
dc.identifier.bibliographicCitationSCIENTIFIC REPORTS, v.4, no., pp.4124 --
dc.description.scptc22-
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > Journal Papers (저널논문)
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