Spin-Orbit Torque Switching in an All-Van der Waals Heterostructure

Abstract

Current-induced control of magnetization in ferromagnets using spin-orbit torque (SOT) has drawn attention as a new mechanism for fast and energy efficient magnetic memory devices. Energy-efficient spintronic devices require a spin-current source with a large SOT efficiency (xi) and electrical conductivity (sigma), and an efficient spin injection across a transparent interface. Herein, single crystals of the van der Waals (vdW) topological semimetal WTe2 and vdW ferromagnet Fe3GeTe2 are used to satisfy the requirements in their all-vdW-heterostructure with an atomically sharp interface. The results exhibit values of xi approximate to 4.6 and sigma approximate to 2.25 x 10(5) omega(-1) m(-1) for WTe2. Moreover, the significantly reduced switching current density of 3.90 x 10(6) A cm(-2) at 150 K is obtained, which is an order of magnitude smaller than those of conventional heavy-metal/ferromagnet thin films. These findings highlight that engineering vdW-type topological materials and magnets offers a promising route to energy-efficient magnetization control in SOT-based spintronics.