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원자제어저차원전자계연구단
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Spin-Orbit Torque Switching in an All-Van der Waals Heterostructure

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dc.contributor.authorShin, Inseob-
dc.contributor.authorCho, Won Joon-
dc.contributor.authorEun-Su An-
dc.contributor.authorSungyu Park-
dc.contributor.authorJeong, Hyeon-Woo-
dc.contributor.authorJang, Seong-
dc.contributor.authorBaek, Woon Joong-
dc.contributor.authorPark, Seong Yong-
dc.contributor.authorYang, Dong-Hwan-
dc.contributor.authorSeo, Jun Ho-
dc.contributor.authorKim, Gi-Yeop-
dc.contributor.authorAli, Mazhar N.-
dc.contributor.authorChoi, Si-Young-
dc.contributor.authorLee, Hyun-Woo-
dc.contributor.authorJun Sung Kim-
dc.contributor.authorKim, Sung Dug-
dc.contributor.authorLee, Gil-Ho-
dc.date.accessioned2022-03-17T01:30:03Z-
dc.date.available2022-03-17T01:30:03Z-
dc.date.created2022-02-08-
dc.date.issued2022-02-
dc.identifier.issn0935-9648-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/11265-
dc.description.abstractCurrent-induced control of magnetization in ferromagnets using spin-orbit torque (SOT) has drawn attention as a new mechanism for fast and energy efficient magnetic memory devices. Energy-efficient spintronic devices require a spin-current source with a large SOT efficiency (xi) and electrical conductivity (sigma), and an efficient spin injection across a transparent interface. Herein, single crystals of the van der Waals (vdW) topological semimetal WTe2 and vdW ferromagnet Fe3GeTe2 are used to satisfy the requirements in their all-vdW-heterostructure with an atomically sharp interface. The results exhibit values of xi approximate to 4.6 and sigma approximate to 2.25 x 10(5) omega(-1) m(-1) for WTe2. Moreover, the significantly reduced switching current density of 3.90 x 10(6) A cm(-2) at 150 K is obtained, which is an order of magnitude smaller than those of conventional heavy-metal/ferromagnet thin films. These findings highlight that engineering vdW-type topological materials and magnets offers a promising route to energy-efficient magnetization control in SOT-based spintronics.-
dc.language영어-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.titleSpin-Orbit Torque Switching in an All-Van der Waals Heterostructure-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000743499700001-
dc.identifier.scopusid2-s2.0-85122867799-
dc.identifier.rimsid77207-
dc.contributor.affiliatedAuthorEun-Su An-
dc.contributor.affiliatedAuthorSungyu Park-
dc.contributor.affiliatedAuthorJun Sung Kim-
dc.identifier.doi10.1002/adma.202101730-
dc.identifier.bibliographicCitationADVANCED MATERIALS, v.34, no.8-
dc.relation.isPartOfADVANCED MATERIALS-
dc.citation.titleADVANCED MATERIALS-
dc.citation.volume34-
dc.citation.number8-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.subject.keywordPlusFERROMAGNETISM-
dc.subject.keywordPlusCRYSTAL-
dc.subject.keywordAuthorenergy-efficient SOT device-
dc.subject.keywordAuthorcurrent-induced magnetization switching-
dc.subject.keywordAuthorinterface engineering-
dc.subject.keywordAuthorspin-orbit torque-
dc.subject.keywordAuthorvan der Waals materials-
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > 1. Journal Papers (저널논문)
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