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원자제어 저차원 전자계 연구단
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Spin-Orbit Torque Switching in an All-Van der Waals Heterostructure

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Title
Spin-Orbit Torque Switching in an All-Van der Waals Heterostructure
Author(s)
Shin, Inseob; Cho, Won Joon; Eun-Su An; Sungyu Park; Jeong, Hyeon-Woo; Jang, Seong; Baek, Woon Joong; Park, Seong Yong; Yang, Dong-Hwan; Seo, Jun Ho; Kim, Gi-Yeop; Ali, Mazhar N.; Choi, Si-Young; Lee, Hyun-Woo; Jun Sung Kim; Kim, Sung Dug; Lee, Gil-Ho
Publication Date
2022-02
Journal
ADVANCED MATERIALS, v.34, no.8
Publisher
WILEY-V C H VERLAG GMBH
Abstract
Current-induced control of magnetization in ferromagnets using spin-orbit torque (SOT) has drawn attention as a new mechanism for fast and energy efficient magnetic memory devices. Energy-efficient spintronic devices require a spin-current source with a large SOT efficiency (xi) and electrical conductivity (sigma), and an efficient spin injection across a transparent interface. Herein, single crystals of the van der Waals (vdW) topological semimetal WTe2 and vdW ferromagnet Fe3GeTe2 are used to satisfy the requirements in their all-vdW-heterostructure with an atomically sharp interface. The results exhibit values of xi approximate to 4.6 and sigma approximate to 2.25 x 10(5) omega(-1) m(-1) for WTe2. Moreover, the significantly reduced switching current density of 3.90 x 10(6) A cm(-2) at 150 K is obtained, which is an order of magnitude smaller than those of conventional heavy-metal/ferromagnet thin films. These findings highlight that engineering vdW-type topological materials and magnets offers a promising route to energy-efficient magnetization control in SOT-based spintronics.
URI
https://pr.ibs.re.kr/handle/8788114/11265
DOI
10.1002/adma.202101730
ISSN
0935-9648
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > 1. Journal Papers (저널논문)
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