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나노 구조 물리 연구단
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Tuning doping and strain in graphene by microwave-induced annealing

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Title
Tuning doping and strain in graphene by microwave-induced annealing
Author(s)
Youngchan Kim; Dae-Hyun Cho; Sunmin Ryu; Changgu Lee
Publication Date
2014-02
Journal
CARBON, v.67, no., pp.673 - 679
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Abstract
We propose microwave-induced annealing as a rapid, simple, and effective method of controlling surface doping and strain in graphene. Raman spectroscopy was used to confirm that heavy and uniform p-type (1.2×1013 cm -2) doping can be achieved within only 5 min without unintended defects by placing graphene onto a substrate with a sufficiently high dielectric constant and exposing graphene and its substrate to microwave irradiation. Further, we showed that ripples are formed in suspended graphene when it is exposed to microwave irradiation. Silicon has a sufficiently high dielectric constant (11.9) and graphene is commonly deposited on silicon-based substrates, so our proposed microwaveinduced annealing technique can be used for the rapid manipulation of the properties of graphene at low cost. © 2013 Elsevier Ltd. All rights reserved.
URI
https://pr.ibs.re.kr/handle/8788114/1113
ISSN
0008-6223
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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