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나노 구조 물리 연구단
나노구조물리 연구단
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Light-extraction enhancement of a GaN-based LED covered with ZnO nanorod arrays

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Title
Light-extraction enhancement of a GaN-based LED covered with ZnO nanorod arrays
Author(s)
Hyun Jeong; Doo Jae Park; Hong Seok Lee; Yeong Hwan Ko; Jae Su Yu; Sang-Bae Choi; Dong-Seon Lee; Eun-Kyung Suh; Mun Seok Jeong
Publication Date
2014-04
Journal
NANOSCALE, v.6, no.8, pp.4371 - 4378
Publisher
ROYAL SOC CHEMISTRY
Abstract
We investigate the mechanism of light extraction enhancement of a GaN-based light-emitting diode (LED) grown on patterned sapphire substrate (PSS), that has ZnO nanorod arrays (NRAs) fabricated on top of the device using the hydrothermal method. We found that the light output power of the LED with ZnO NRAs increases by approximately 30% compared to the conventional LED without damaging the electrical properties of the device. We argue that the gradual decrease of the effective refractive index, which is caused by the fabrication of ZnO NRAs, is the mechanism of the observed improvement. Our argument is confirmed by cross-sectional confocal scanning electroluminescence microscopy (CSEM) and the theoretical simulations, where we observed a distinct increase of the transmission at the interface between LED and air at the operation wavelength of the LED. In addition, the plane-view CSEM results indicate that ZnO NRAs, which were grown on the bare p-type GaN layer as an electrical safety margin area, also contribute to the enhanced light output power of the LED, which indicate further enhancement is manifested even in the optically ineffective sacrificial area.
URI
https://pr.ibs.re.kr/handle/8788114/1065
ISSN
2040-3364
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
Files in This Item:
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