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Doping-Mediated Lattice Engineering of Monolayer ReS2for Modulating In-Plane Anisotropy of Optical and Transport Properties

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Title
Doping-Mediated Lattice Engineering of Monolayer ReS2for Modulating In-Plane Anisotropy of Optical and Transport Properties
Author(s)
Ghimire, Ganesh; Dhakal, Krishna P.; Choi, Wooseon; Esthete, Yonas Assefa; Kim, Seon Je; Tran, Trang Thu; Hyoyoung Lee; Yang, Heejun; Dinh Loc Duong; Young-Min Kim; Kim, Jeongyong
Publication Date
2021-08
Journal
ACS Nano, v.15, no.8, pp.13770 - 13780
Publisher
American Chemical Society
Abstract
© 2021 American Chemical Society.ReS2 exhibits strong anisotropic optical and electrical responses originating from the asymmetric lattice. Here, we show that the anisotropy of monolayer (1L) ReS2 in optical scattering and electrical transport can be practically erased by lattice engineering via lithium (Li) treatment. Scanning transmission electron microscopy revealed that significant strain is induced in the lattice of Li-treated 1L-ReS2, due to high-density electron doping and the resultant formation of continuous tiling of nanodomains with randomly rotating orientations of 60°, which produced a nearly isotropic response of polarized Raman scattering and absorption of Li-treated 1L-ReS2. With Li treatment, the in-plane conductance of 1L-ReS2 increased by an order of magnitude, and its angle dependence became negligible. Our result that the asymmetric phase was converted into the isotropic phase by electron injection could significantly expand the optoelectronic applications of polymorphic two-dimensional transition metal dichalcogenides.
URI
https://pr.ibs.re.kr/handle/8788114/10435
DOI
10.1021/acsnano.1c05316
ISSN
1936-0851
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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