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One-Step Synthesis of NbSe2/Nb-Doped-WSe2Metal/Doped-Semiconductor van der Waals Heterostructures for Doping Controlled Ohmic Contact

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Title
One-Step Synthesis of NbSe2/Nb-Doped-WSe2Metal/Doped-Semiconductor van der Waals Heterostructures for Doping Controlled Ohmic Contact
Author(s)
Van Tu Vu; Vu, Thi Thanh Huong; Phan, Thanh Luan; Kang, Won Tae; Kim, Young Rae; Minh Dao Tran; Huong Thi Thanh Nguyen; Young Hee Lee; Yu, Woo Jong
Publication Date
2021-08
Journal
ACS Nano, v.15, no.8, pp.13031 - 13040
Publisher
American Chemical Society
Abstract
© 2021 American Chemical Society.van der Waals heterostructures (vdWHs) of metallic (m-) and semiconducting (s-) transition-metal dichalcogenides (TMDs) exhibit an ideal metal/semiconductor (M/S) contact in a field-effect transistor. However, in the current two-step chemical vapor deposition process, the synthesis of m-TMD on pregrown s-TMD contaminates the van der Waals (vdW) interface and hinders the doping of s-TMD. Here, NbSe2/Nb-doped-WSe2 metal-doped-semiconductor (M/d-S) vdWHs are created via a one-step synthesis approach using a niobium molar ratio-controlled solution-phase precursor. The one-step growth approach synthesizes Nb-doped WSe2 with a controllable doping concentration and metal/doped-semiconductor vdWHs. The hole carrier concentration can be precisely controlled by controlling the Nb/(W + Nb) molar ratio in the precursor solution from ∼3 × 1011/cm2 at Nb-0% to ∼1.38 × 1012/cm2 at Nb-60%; correspondingly, the contact resistance RC value decreases from 10 »888.78 at Nb-0% to 70.60 kω.μm at Nb-60%. The Schottky barrier height measurement in the Arrhenius plots of ln(Isat/T2) versus q/KBT demonstrated an ohmic contact in the NbSe2/WxNb1-xSe2 vdWHs. Combining p-doping in WSe2 and M/d-S vdWHs, the mobility (27.24 cm2 V-1 s-1) and on/off ratio (2.2 × 107) are increased 1238 and 4400 times, respectively, compared to that using the Cr/pure-WSe2 contact (0.022 cm2 V-1 s-1 and 5 × 103, respectively). Together, the RC value using the NbSe2 contact shows 2.46 kω.μm, which is ∼29 times lower than that of using a metal contact. This method is expected to guide the synthesis of various M/d-S vdWHs and applications in future high-performance integrated circuits.
URI
https://pr.ibs.re.kr/handle/8788114/10432
DOI
10.1021/acsnano.1c02038
ISSN
1936-0851
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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