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One-Step Transfer and Integration of Multifunctionality in CVD Graphene by TiO2/Graphene Oxide Hybrid Layer

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Title
One-Step Transfer and Integration of Multifunctionality in CVD Graphene by TiO2/Graphene Oxide Hybrid Layer
Author(s)
Jeong, Hee Jin; Kim, Ho Young; Hyun Jeong; Han, Joong Tark; Jeong, Seung Yol; Baeg, Kang-Jun; Mun Seok Jeong; Lee, Geon-Woong
Subject
FIELD-EFFECT TRANSISTORS, ; CARBON NANOTUBES, ; TRANSPARENT ELECTRODES, ; TIO2 NANOPARTICLES, ; FILMS, ; DEVICES, ; TITANIUM, ; BANDGAP, ; CONDUCTIVITY, ; CONVERSION
Publication Date
2014-05
Journal
SMALL, v.10, no.10, pp.2057 - 2066
Publisher
WILEY-V C H VERLAG GMBH
Abstract
We present a straightforward method for simultaneously enhancing the electrical conductivity, environmental stability, and photocatalytic properties of graphene films through one-step transfer of CVD graphene and integration by introducing TiO2/graphene oxide layer. A highly durable and flexible TiO2 layer is successfully used as a supporting layer for graphene transfer instead of the commonly used PMMA. Transferred graphene/TiO2 film is directly used for measuring the carrier transport and optoelectronic properties without an extra TiO2 removal and following deposition steps for multifunctional integration into devices because the thin TiO2 layer is optically transparent and electrically semiconducting. Moreover, the TiO2 layer induces charge screening by electrostatically interacting with the residual oxygen moieties on graphene, which are charge scattering centers, resulting in a reduced current hysteresis. Adsorption of water and other chemical molecules onto the graphene surface is also prevented by the passivating TiO2 layer, resulting in the long term environmental stability of the graphene under high temperature and humidity. In addition, the graphene/TiO2 film shows effectively enhanced photocatalytic properties because of the increase in the transport efficiency of the photogenerated electrons due to the decrease in the injection barrier formed at the interface between the F-doped tin oxide and TiO2 layers.
URI
https://pr.ibs.re.kr/handle/8788114/1026
DOI
10.1002/smll.201303541
ISSN
1613-6810
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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