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Anomalous effect due to oxygen vacancy accumulation below the electrode in bipolar RS Pt/Nb:STO cells

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Title
Anomalous effect due to oxygen vacancy accumulation below the electrode in bipolar RS Pt/Nb:STO cells
Author(s)
Shin Buhm Lee; Jae Sung Lee; Jong-Bong Park; Yong Koo Kyoung; Myoung-Jae Lee; Tae Won Noh
Publication Date
2014-06
Journal
APL MATERIALS, v.2, no.6, pp.066103 -
Publisher
AMER INST PHYSICS
Abstract
In conventional semiconductor theory, greater doping decreases the electronic resistance of a semiconductor. For the bipolar resistance switching (BRS) phenomena in oxides, the same doping principle has been used commonly to explain the relationship between the density variation of oxygen vacancies (Vo¨) and the electronic resistance. We find that the Vo¨ density can change at a depth of ∼10 nm below the Pt electrodes in Pt/Nb:SrTiO3 cells, depending on the resistance state. Using electron energy loss spectroscopy and secondary ion mass spectrometry, we found that greater Vo¨ density underneath the electrode resulted in higher resistance, contrary to the conventional doping principle of semiconductors. To explain this seemingly anomalous experimental behavior, we provide quantitative explanations on the anomalous BRS behavior by simulating the mobile Vo¨ [J. S. Lee et al., Appl. Phys. Lett. 102, 253503 (2013)] near the Schottky barrier interface.
URI
https://pr.ibs.re.kr/handle/8788114/1015
ISSN
2166-532X
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > Journal Papers (저널논문)
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