Hydrogen-induced anomalous Hall effect in Co-doped ZnO

Cited 6 time in webofscience Cited 0 time in scopus
302 Viewed 39 Downloaded
Title
Hydrogen-induced anomalous Hall effect in Co-doped ZnO
Author(s)
Yong Chan Cho; Seunghun Lee; Ji Hun Park; Won Kyoung Kim; Ho-Hyun Nahm; Chul Hong Park; Se-Young Jeong
Publication Date
2014-07
Journal
NEW JOURNAL OF PHYSICS, v.16, no., pp.73030 -
Publisher
IOP PUBLISHING LTD
Abstract
The electrical transport characteristics and anomalous Hall effect (AHE) were investigated for a hydrogen-injected Co-doped ZnO thin film. Based on the measurements of resistivity and the Hall effect between 5K and 300 K, the existence of Co-H-Co complexes was observed to introduce the AHE and enable the AHE to persist up to room temperature. The observed H-induced AHE originates from the asymmetric scattering of carrier hopping between the localized states driven by ferromagnetic Co-H-Co complexes, and a theoretical study using first-principle calculations supports the experimental results well. This large ferromagnetic response of charge carriers by the hydrogen-induced AHE on semiconducting oxides will stimulate the further investigation of roomtemperature spintronic applications.
URI
https://pr.ibs.re.kr/handle/8788114/983
ISSN
1367-2630
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > Journal Papers (저널논문)
Files in This Item:
Hydrogen-induced anomalous Hall effect in Co-doped ZnO.pdfDownload

qrcode

  • facebook

    twitter

  • Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
해당 아이템을 이메일로 공유하기 원하시면 인증을 거치시기 바랍니다.

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse