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나노물질 및 화학반응 연구단
나노물질 및 화학반응 연구단
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Atomic layer deposition assisted pattern multiplicatino of block copolymer lithography for 5nm scale nanopatterning

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Title
Atomic layer deposition assisted pattern multiplicatino of block copolymer lithography for 5nm scale nanopatterning
Author(s)
Hyoung-Seok Moon; Ju Young Kim; Hyeong Min Jin; Woo Jae Lee; Hyeon Jin Choi; Jeong Ho Mun; Young Joo Choi; Seung Keun Cha; Se Hun Kwon; Sang Ouk Kim
Publication Date
2014-07
Journal
ADVANCED FUNCTIONAL MATERIALS, v.24, no.27, pp.4343 - 4348
Publisher
WILEY-V C H VERLAG GMBH
Abstract
5-nm-scale line and hole patterning is demonstrated by synergistic integration of block copolymer (BCP) lithography with atomic layer deposition (ALD). While directed self-assembly of BCPs generates highly ordered line array or hexagonal dot array with the pattern periodicity of 28 nm and the minimum feature size of 14 nm, pattern density multiplication employing ALD successfully reduces the pattern periodicity down to 14 nm and minimum feature size down to 5 nm. Self-limiting ALD process enable the low temperature, conformal deposition of 5 nm thick spacer layer directly at the surface of organic BCP patterns. This ALD assisted pattern multiplication addresses the intrinsic thermodynamic limitations of low χ BCPs for sub-10-nm scale downscaling. Moreover, this approach offers a general strategy for scalable ultrafi ne nanopatterning without burden for multiple overlay control and high cost lithographic tools.
URI
https://pr.ibs.re.kr/handle/8788114/973
ISSN
1616-301X
Appears in Collections:
Center for Nanomaterials and Chemical Reactions(나노물질 및 화학반응 연구단) > Journal Papers (저널논문)
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