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Leining, Zhang
다차원 탄소재료 연구단
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Epitaxial Growth of 2D Materials on High-Index Substrate Surfaces

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Title
Epitaxial Growth of 2D Materials on High-Index Substrate Surfaces
Author(s)
ZHANG Leining; Peng Peng; Feng Ding
Publication Date
2021-05
Journal
Advanced Functional Materials, v.31, no.29
Publisher
John Wiley and Sons Inc
Abstract
© 2021 Wiley-VCH GmbHRecently, the successful synthesis of wafer-scale single-crystal graphene, hexagonal boron nitride (hBN), and MoS2 on transition metal surfaces with step edges boosted the research interests in synthesizing wafer-scale 2D single crystals on high-index substrate surfaces. Here, using hBN growth on high-index Cu surfaces as an example, a systematic theoretical study to understand the epitaxial growth of 2D materials on various high-index surfaces is performed. It is revealed that hBN orientation on a high-index surface is highly dependent on the alignment of the step edges of the surface as well as the surface roughness. On an ideal high-index surface, well-aligned hBN islands can be easily achieved, whereas curved step edges on a rough surface can lead to the alignment of hBN along with different directions. This study shows that high-index surfaces with a large step density are robust for templating the epitaxial growth of 2D single crystals due to their large tolerance for surface roughness and provides a general guideline for the epitaxial growth of various 2D single crystals.
URI
https://pr.ibs.re.kr/handle/8788114/9716
DOI
10.1002/adfm.202100503
ISSN
1616-301X
Appears in Collections:
Center for Multidimensional Carbon Materials(다차원 탄소재료 연구단) > 1. Journal Papers (저널논문)
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