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Leining, Zhang
다차원 탄소재료 연구단
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Epitaxial Growth of 2D Materials on High-Index Substrate Surfaces

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dc.contributor.authorZHANG Leining-
dc.contributor.authorPeng Peng-
dc.contributor.authorFeng Ding-
dc.date.accessioned2021-05-31T05:50:02Z-
dc.date.accessioned2021-05-31T05:50:02Z-
dc.date.available2021-05-31T05:50:02Z-
dc.date.available2021-05-31T05:50:02Z-
dc.date.created2021-05-27-
dc.date.issued2021-07-
dc.identifier.issn1616-301X-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/9716-
dc.description.abstract© 2021 Wiley-VCH GmbHRecently, the successful synthesis of wafer-scale single-crystal graphene, hexagonal boron nitride (hBN), and MoS2 on transition metal surfaces with step edges boosted the research interests in synthesizing wafer-scale 2D single crystals on high-index substrate surfaces. Here, using hBN growth on high-index Cu surfaces as an example, a systematic theoretical study to understand the epitaxial growth of 2D materials on various high-index surfaces is performed. It is revealed that hBN orientation on a high-index surface is highly dependent on the alignment of the step edges of the surface as well as the surface roughness. On an ideal high-index surface, well-aligned hBN islands can be easily achieved, whereas curved step edges on a rough surface can lead to the alignment of hBN along with different directions. This study shows that high-index surfaces with a large step density are robust for templating the epitaxial growth of 2D single crystals due to their large tolerance for surface roughness and provides a general guideline for the epitaxial growth of various 2D single crystals.-
dc.description.uri1-
dc.language영어-
dc.publisherJohn Wiley and Sons Inc-
dc.titleEpitaxial Growth of 2D Materials on High-Index Substrate Surfaces-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000646202500001-
dc.identifier.scopusid2-s2.0-85105008968-
dc.identifier.rimsid75662-
dc.contributor.affiliatedAuthorZHANG Leining-
dc.contributor.affiliatedAuthorPeng Peng-
dc.contributor.affiliatedAuthorFeng Ding-
dc.identifier.doi10.1002/adfm.202100503-
dc.identifier.bibliographicCitationAdvanced Functional Materials, v.31, no.29-
dc.citation.titleAdvanced Functional Materials-
dc.citation.volume31-
dc.citation.number29-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordAuthor2D materials-
dc.subject.keywordAuthorepitaxial growth-
dc.subject.keywordAuthorhexagonal boron nitride-
dc.subject.keywordAuthorhigh-index Cu surfaces-
Appears in Collections:
Center for Multidimensional Carbon Materials(다차원 탄소재료 연구단) > 1. Journal Papers (저널논문)
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