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원자제어 저차원 전자계 연구단
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Reconfigurable photo-induced doping of two-dimensional van der Waals semiconductors using different photon energies

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Title
Reconfigurable photo-induced doping of two-dimensional van der Waals semiconductors using different photon energies
Author(s)
Seo, Seung-Young; Moon, Gunho; Okello, Odongo F. N.; Park, Min Yeong; Han, Cheolhee; Cha, Soonyoung; Choi, Hyunyong; Yeom, Han Woong; Choi, Si-Young; Park, Jewook; Jo, Moon-Ho
Publication Date
2021-01
Journal
NATURE ELECTRONICS, v.4, no.1, pp.38 - 44
Publisher
NATURE RESEARCH
Abstract
Few-layer molybdenum ditelluride and tungsten diselenide field-effect transistors can be reversibly doped with different carrier types and concentrations using pulses of ultraviolet and visible light, allowing reconfigurable complementary metal-oxide-semiconductor circuits to be created. Two-dimensional semiconductors have a range of electronic and optical properties that can be used in the development of advanced electronic devices. However, unlike conventional silicon semiconductors, simple doping methods to monolithically assemble n- and p-type channels on a single two-dimensional semiconductor are lacking, which makes the fabrication of integrated circuitry challenging. Here we report the reversible photo-induced doping of few-layer molybdenum ditelluride and tungsten diselenide, where the channel polarity can be reconfigured from n-type to p-type, and vice versa, with laser light at different frequencies. This reconfigurable doping is attributed to selective light-lattice interactions, such as the formation of tellurium self-interstitial defects under ultraviolet illumination and the incorporation of substitutional oxygen in tellurium and molybdenum vacancies under visible illumination. Using this approach, we create a complementary metal-oxide-semiconductor (CMOS) device on a single channel, where the circuit functions can be dynamically reset from a CMOS inverter to a CMOS switch using pulses of different light frequencies.
URI
https://pr.ibs.re.kr/handle/8788114/9523
DOI
10.1038/s41928-020-00512-6
ISSN
2520-1131
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > 1. Journal Papers (저널논문)
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