Identifying Defect-Induced Trion in Monolayer WS2 via Carrier Screening Engineering
DC Field | Value | Language |
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dc.contributor.author | Riya Sebait | - |
dc.contributor.author | Chandan Biswas | - |
dc.contributor.author | Bumsub Song | - |
dc.contributor.author | Changwon Seo | - |
dc.contributor.author | Young Hee Lee | - |
dc.date.accessioned | 2021-04-16T07:30:52Z | - |
dc.date.accessioned | 2021-04-16T07:30:52Z | - |
dc.date.available | 2021-04-16T07:30:52Z | - |
dc.date.available | 2021-04-16T07:30:52Z | - |
dc.date.created | 2021-02-26 | - |
dc.date.issued | 2021-02-23 | - |
dc.identifier.issn | 1936-0851 | - |
dc.identifier.uri | https://pr.ibs.re.kr/handle/8788114/9488 | - |
dc.description.abstract | Unusually high exciton binding energies (BEs), as much as similar to 1 eV in monolayer transition-metal dichalcogenides, provide opportunities for exploring exotic and stable excitonic many-body effects. These include many-body neutral excitons, trions, biexcitons, and defect-induced excitons at room temperature, rarely realized in bulk materials. Nevertheless, the defect-induced trions correlated with charge screening have never been observed, and the corresponding BEs remain unknown. Here we report defect-induced A-trions and B-trions in monolayer tungsten disulfide (WS2) via carrier screening engineering with photogenerated carrier modulation, external doping, and substrate scattering. Defect-induced trions strongly couple with inherent SiO2 hole traps under high photocarrier densities and become more prominent in rhenium-doped WS2. The absence of defect-induced trion peaks was confirmed using a trap-free hexagonal boron nitride substrate, regardless of power density. Moreover, many-body excitonic charge states and their BEs were compared via carrier screening engineering at room temperature. The highest BE was observed in the defect-induced A-trion state (similar to 214 meV), comparably higher than the trion (209 meV) and neutral exciton (174 meV), and further tuned by external photoinduced carrier density control. This investigation allows us to demonstrate defect-induced trion BE localization via spatial BE mapping in the monolayer WS2 midflake regions distinctive from the flake edges. | - |
dc.description.uri | 1 | - |
dc.language | 영어 | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Identifying Defect-Induced Trion in Monolayer WS2 via Carrier Screening Engineering | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.identifier.wosid | 000623061800071 | - |
dc.identifier.scopusid | 2-s2.0-85100277349 | - |
dc.identifier.rimsid | 74777 | - |
dc.contributor.affiliatedAuthor | Riya Sebait | - |
dc.contributor.affiliatedAuthor | Chandan Biswas | - |
dc.contributor.affiliatedAuthor | Bumsub Song | - |
dc.contributor.affiliatedAuthor | Changwon Seo | - |
dc.contributor.affiliatedAuthor | Young Hee Lee | - |
dc.identifier.doi | 10.1021/acsnano.0c08828 | - |
dc.identifier.bibliographicCitation | ACS NANO, v.15, no.2, pp.2849 - 2857 | - |
dc.citation.title | ACS NANO | - |
dc.citation.volume | 15 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 2849 | - |
dc.citation.endPage | 2857 | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | EXCITON BINDING-ENERGY | - |
dc.subject.keywordPlus | PHOTOINDUCED BANDGAP RENORMALIZATION | - |
dc.subject.keywordPlus | MOS2 | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | SEMICONDUCTOR | - |
dc.subject.keywordPlus | GAP | - |
dc.subject.keywordAuthor | exciton binding energy | - |
dc.subject.keywordAuthor | defect-induced B-trion | - |
dc.subject.keywordAuthor | scanning tunneling spectroscopy | - |
dc.subject.keywordAuthor | spatial binding energy distribution | - |
dc.subject.keywordAuthor | neutral-to-trion conversion | - |