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Electrical control of anisotropic and tightly bound excitons in bilayer phosphorene

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Title
Electrical control of anisotropic and tightly bound excitons in bilayer phosphorene
Author(s)
Sangho Yoon; Taeho Kim; Seung-Young Seo; Shin, Seung-Hyun; Su-Beom Song; Kim, Bumjoon; Watanabe, Kenji; Taniguchi, Takashi; Lee, Gil-Ho; Moon-Ho Jo; Qiu, Diana Y.; Jonghwan Kim
Publication Date
2021-01
Journal
PHYSICAL REVIEW B, v.103, no.4
Publisher
AMER PHYSICAL SOC
Abstract
Monolayer and few-layer phosphorene are anisotropic quasi-two-dimensional (quasi-2D) van der Waals (vdW) semiconductors with the linear-dichroic light-matter interaction and the widely tunable direct band gap in the infrared frequency range. Despite recent theoretical predictions of strongly bound excitons with unique properties, it remains experimentally challenging to probe excitonic quasiparticles due to the severe oxidation that occurs during device fabrication. In this study, we report the observation of strongly bound excitons and trions with highly anisotropic optical properties in intrinsic bilayer phosphorene, which are protected from oxidation by encapsulation with hexagonal boron nitride (hBN) in a field-effect transistor (FET) geometry. Reflection contrast and photoluminescence spectroscopy clearly reveal the linear-dichroic optical spectra from anisotropic excitons and trions in the hBN-encapsulated bilayer phosphorene. The optical resonances from the exciton Rydberg series indicate that the neutral exciton binding energy is over 100 meV even with the dielectric screening from hBN. The electrostatic injection of free holes enables an additional optical resonance from a positive trion (charged exciton) similar to 30 meV below the optical band gap of the charge-neutral system. Our work shows exciting possibilities for monolayer and few-layer phosphorene as a platform to explore many-body physics and photonics and optoelectronics based on strongly bound excitons with twofold anisotropy.
URI
https://pr.ibs.re.kr/handle/8788114/9475
DOI
10.1103/PhysRevB.103.L041407
ISSN
2469-9950
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > 1. Journal Papers (저널논문)
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