Quantum critical scaling for finite-temperature Mott-like metal-insulator crossover in few-layered MoS2
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Byoung Hee Moon | - |
dc.contributor.author | Han, Gang Hee | - |
dc.contributor.author | Radonjic, Milos M. | - |
dc.contributor.author | Ji, Hyunjin | - |
dc.contributor.author | Dobrosavljevic, Vladimir | - |
dc.date.accessioned | 2021-01-22T08:30:01Z | - |
dc.date.accessioned | 2021-01-22T08:30:01Z | - |
dc.date.available | 2021-01-22T08:30:01Z | - |
dc.date.available | 2021-01-22T08:30:01Z | - |
dc.date.created | 2021-01-22 | - |
dc.date.issued | 2020-12 | - |
dc.identifier.issn | 2469-9950 | - |
dc.identifier.uri | https://pr.ibs.re.kr/handle/8788114/9088 | - |
dc.description.abstract | The dominant role of strong electron-electron interactions in driving two-dimensional metal-insulator transitions has long been debated, but its clear experimental demonstration is still not available. Here, we examine the finite-temperature transport behavior of few-layered MoS2 material in the vicinity of the density-driven metal-insulator transition, revealing previously overlooked universal features characteristic of strongly correlated electron systems. Our scaling analysis, based on the Wigner-Mott theoretical viewpoint, conclusively demonstrates that the transition is driven by strong electron-electron interactions and not disorder, in striking resemblance to what is seen in other Mott systems. Our results provide compelling evidence that transition-metal dichalcogenides provide an ideal testing ground, and should open an exciting avenue for the study of strong correlation physics. | - |
dc.description.uri | 1 | - |
dc.language | 영어 | - |
dc.publisher | AMER PHYSICAL SOC | - |
dc.title | Quantum critical scaling for finite-temperature Mott-like metal-insulator crossover in few-layered MoS2 | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.identifier.wosid | 000602255300005 | - |
dc.identifier.scopusid | 2-s2.0-85099126385 | - |
dc.identifier.rimsid | 74327 | - |
dc.contributor.affiliatedAuthor | Byoung Hee Moon | - |
dc.identifier.doi | 10.1103/PhysRevB.102.245424 | - |
dc.identifier.bibliographicCitation | Physical Review b, v.102, no.24, pp.1 - 9 | - |
dc.citation.title | Physical Review b | - |
dc.citation.volume | 102 | - |
dc.citation.number | 24 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 9 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | TRANSITION | - |
dc.subject.keywordPlus | B=0 | - |
dc.subject.keywordPlus | DISORDER | - |
dc.subject.keywordPlus | DIAGRAM | - |
dc.subject.keywordAuthor | TRANSITION | - |
dc.subject.keywordAuthor | B=0 | - |
dc.subject.keywordAuthor | DISORDER | - |
dc.subject.keywordAuthor | DIAGRAM | - |