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Synaptic Characteristics of an Ultrathin Hexagonal Boron Nitride (h-BN) Diffusive Memristor

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dc.contributor.authorGhulam Dastgeer-
dc.contributor.authorHaider Abbas-
dc.contributor.authorDuk Young Kim-
dc.contributor.authorJonghwa Eom-
dc.contributor.authorChanghwan Choi-
dc.date.accessioned2021-01-20T05:50:01Z-
dc.date.accessioned2021-01-20T05:50:01Z-
dc.date.available2021-01-20T05:50:01Z-
dc.date.available2021-01-20T05:50:01Z-
dc.date.created2020-12-09-
dc.date.issued2021-01-
dc.identifier.issn1862-6254-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/9075-
dc.description.abstractNano-sized two-terminal memristor exhibiting volatile threshold switching (TS) is a promising candidate for the emulation of biological synaptic functions to realize efficient neuromorphic computing systems. The Ca2+ dynamics play a vital role in generating a temporal response for neural functions by changing the synaptic weight of biological synapses. Herein, a thinnest synaptic device is fabricated demonstrating drift dynamics of Ag+ migration through the exfoliated h-BN sheets, which emulates neuromorphic computing operations. The TS characteristics with a large ION/OFF up to ≈105 lead to bio-synaptic applications, including short-term and long-term memory. The experimental realization of the synaptic behavior is demonstrated with paired-pulse facilitation (PPF), spike-rate-dependent plasticity (SRDP), and transition from short-term plasticity (STP) to long-term plasticity (LTP). The transition from STP to LTP in this synaptic device verifies the Atkinson and Shiffrin psychological model of human brain learning experimentally. The input pulses with different spike-times are used to replicate the synaptic functionalities. The two-terminal diffusive memristors constructed with thin sheets of 2D-flexible h-BN resistive materials may lead to flexible neuromorphic devices for biological applications-
dc.language영어-
dc.publisherWiley - VCH Verlag GmbH & CO. KGaA-
dc.titleSynaptic Characteristics of an Ultrathin Hexagonal Boron Nitride (h-BN) Diffusive Memristor-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000590311200001-
dc.identifier.scopusid2-s2.0-85096658176-
dc.identifier.rimsid73956-
dc.contributor.affiliatedAuthorGhulam Dastgeer-
dc.contributor.affiliatedAuthorDuk Young Kim-
dc.identifier.doi10.1002/pssr.202000473-
dc.identifier.bibliographicCitationPhysica Status Solidi - Rapid Research Letetrs, v.15, no.1-
dc.relation.isPartOfPhysica Status Solidi - Rapid Research Letetrs-
dc.citation.titlePhysica Status Solidi - Rapid Research Letetrs-
dc.citation.volume15-
dc.citation.number1-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.subject.keywordPlusDEVICES-
dc.subject.keywordPlusMEMORY-
dc.subject.keywordPlusPLASTICITY-
dc.subject.keywordAuthorh-BN-
dc.subject.keywordAuthormemristors-
dc.subject.keywordAuthorneuromorphic computing-
dc.subject.keywordAuthorsynapses-
dc.subject.keywordAuthorthreshold switching-
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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