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Confocal absorption spectral imaging of MoS2: Optical transitions depending on the atomic thickness of intrinsic and chemically doped MoS2Highly Cited Paper

DC Field Value Language
dc.contributor.authorKrishna P. Dhakal-
dc.contributor.authorDinh Loc Duong-
dc.contributor.authorJubok Lee-
dc.contributor.authorHonggi Nam-
dc.contributor.authorMin Su Kim-
dc.contributor.authorMin Kan-
dc.contributor.authorYoung Hee Lee-
dc.contributor.authorJeongyong Kim-
dc.date.available2015-04-20T05:22:13Z-
dc.date.created2014-10-30-
dc.date.issued2014-11-
dc.identifier.issn2040-3364-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/877-
dc.description.abstractWe performed a nanoscale confocal absorption spectral imaging to obtain the full absorption spectra (over the range 1.5–3.2 eV) within regions having different numbers of layers and studied the variation of optical transition depending on the atomic thickness of the MoS2 film. Three distinct absorption bands corresponding to A and B excitons and a high-energy background (BG) peak at 2.84 eV displayed a gradual redshift as the MoS2 film thickness increased from the monolayer, to the bilayer, to the bulk MoS2 and this shift was attributed to the reduction of the gap energy in the Brillouin zone at the K-point as the atomic thickness increased. We also performed n-type chemical doping of MoS2 films using reduced benzyl viologen (BV) and the confocal absorption spectra modified by the doping showed a strong dependence on the atomic thickness: A and B exciton peaks were greatly quenched in the monolayer MoS2 while much less effect was shown in larger thickness and the BG peak either showed very small quenching for 1 L MoS2 or remained constant for larger thicknesses. Our results indicate that confocal absorption spectral imaging can provide comprehensive information on optical transitions of microscopic size intrinsic and doped two-dimensional layered materials.-
dc.language영어-
dc.publisherROYAL SOC CHEMISTRY-
dc.titleConfocal absorption spectral imaging of MoS2: Optical transitions depending on the atomic thickness of intrinsic and chemically doped MoS2-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000344997500099-
dc.identifier.scopusid2-s2.0-84907964936-
dc.identifier.rimsid15043ko
dc.date.tcdate2018-10-01-
dc.contributor.affiliatedAuthorKrishna P. Dhakal-
dc.contributor.affiliatedAuthorDinh Loc Duong-
dc.contributor.affiliatedAuthorJubok Lee-
dc.contributor.affiliatedAuthorHonggi Nam-
dc.contributor.affiliatedAuthorMin Su Kim-
dc.contributor.affiliatedAuthorMin Kan-
dc.contributor.affiliatedAuthorYoung Hee Lee-
dc.contributor.affiliatedAuthorJeongyong Kim-
dc.identifier.doi10.1039/c4nr03703k-
dc.identifier.bibliographicCitationNANOSCALE, v.6, no.21, pp.13028 - 13035-
dc.relation.isPartOfNANOSCALE-
dc.citation.titleNANOSCALE-
dc.citation.volume6-
dc.citation.number21-
dc.citation.startPage13028-
dc.citation.endPage13035-
dc.date.scptcdate2018-10-01-
dc.description.wostc114-
dc.description.scptc114-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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