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Electrical Properties of MoS2 Field-Effect Transistors in Contact with Layered CrPS4

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Title
Electrical Properties of MoS2 Field-Effect Transistors in Contact with Layered CrPS4
Author(s)
Minjeong Shin; Mi Jung Lee; Ji Hye Lee; Bae Ho Park; Sungmin Lee; Je-Geun Park
Subject
MoS2, ; CrPS4, ; Heterostructure, ; FET, ; Dual-gated
Publication Date
2020-04
Journal
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.76, no.8, pp.731 - 735
Publisher
KOREAN PHYSICAL SOC
Abstract
ⓒThe Korean Physical Society We report the enhanced electrical performance of a MoS2 field-effect transistor (FET) by using a contact with a layered CrPS4. Our transport measurements revealed that MoS2 channel with CrPS4 junction showed higher mobility of 33.9 cm(2)/Vs than that without CrPS4 junction on SiO2/Si substrate. We also fabricated a MoS2 FET with a top gate insulator, CrPS4, which showed low leakage current of 10(-11) A and high on/off ratio of 10(5). In a dual-gated FET with SiO2 bottom gate insulator and CrPS4 top gate insulator, much decreased sub-threshold swing of 0.70 V/dec was obtained
URI
https://pr.ibs.re.kr/handle/8788114/8651
DOI
10.3938/jkps.76.731
ISSN
0374-4884
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > 1. Journal Papers (저널논문)
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