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Colossal flexoresistance in dielectrics

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Title
Colossal flexoresistance in dielectrics
Author(s)
Sung Min Park; Bo Wang; Tula Paudel; Se Young Park; Saikat Das; Jeong Rae Kim; Eun Kyo Ko; Han Gyeol Lee; Nahee Park; Lingling Tao; Dongseok Suh; Evgeny Y. Tsymbal; Long-Qing Chen; Tae Won Noh; Daesu Lee
Subject
ATOMIC DISPLACEMENTS, ; ROOM-TEMPERATURE, ; POLARIZATION, ; SRTIO3, ; FERROELECTRICITY, ; PIEZORESISTANCE, ; ENHANCEMENT, ; STABILITY, ; RESPONSES
Publication Date
2020-05
Journal
NATURE COMMUNICATIONS, v.11, no.1, pp.2586
Publisher
NATURE PUBLISHING GROUP
Abstract
© 2020, The Author(s). Dielectrics have long been considered as unsuitable for pure electrical switches; under weak electric fields, they show extremely low conductivity, whereas under strong fields, they suffer from irreversible damage. Here, we show that flexoelectricity enables damage-free exposure of dielectrics to strong electric fields, leading to reversible switching between electrical states—insulating and conducting. Applying strain gradients with an atomic force microscope tip polarizes an ultrathin film of an archetypal dielectric SrTiO3 via flexoelectricity, which in turn generates non-destructive, strong electrostatic fields. When the applied strain gradient exceeds a certain value, SrTiO3 suddenly becomes highly conductive, yielding at least around a 108-fold decrease in room-temperature resistivity. We explain this phenomenon, which we call the colossal flexoresistance, based on the abrupt increase in the tunneling conductance of ultrathin SrTiO3 under strain gradients. Our work extends the scope of electrical control in solids, and inspires further exploration of dielectric responses to strong electromechanical fields
URI
https://pr.ibs.re.kr/handle/8788114/7863
DOI
10.1038/s41467-020-16207-7
ISSN
2041-1723
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > 1. Journal Papers (저널논문)
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