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Ultralow-dielectric-constant amorphous boron nitride

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Title
Ultralow-dielectric-constant amorphous boron nitride
Author(s)
Seokmo Hong; Chang-Seok Lee; Min-Hyun Lee; Yeongdong Lee; Kyung Yeol Ma; Gwangwoo Kim; Seong In Yoon; Kyuwook Ihm; Ki-Jeong Kim; Tae Joo Shin; Sang Won Kim; Eun-chae Jeon; Hansol Jeon; Ju-Young Kim; Hyung-Ik Lee; Zonghoon Lee; Aleandro Antidormi; Stephan Roche; Manish Chhowalla; Hyeon-Jin Shin; Hyeon Suk Shin
Subject
Low-K Dielectric, ; Interconnect, ; Plasma Enhanced Chemical Vapor Deposition
Publication Date
2020-06
Journal
NATURE, v.582, no.7813, pp.511 - 514
Publisher
NATURE PUBLISHING GROUP
Abstract
© 2020, The Author(s), under exclusive licence to Springer Nature Limited.Decrease in processing speed due to increased resistance and capacitance delay is a major obstacle for the down-scaling of electronics1–3. Minimizing the dimensions of interconnects (metal wires that connect different electronic components on a chip) is crucial for the miniaturization of devices. Interconnects are isolated from each other by non-conducting (dielectric) layers. So far, research has mostly focused on decreasing the resistance of scaled interconnects because integration of dielectrics using low-temperature deposition processes compatible with complementary metal–oxide–semiconductors is technically challenging. Interconnect isolation materials must have low relative dielectric constants (κ values), serve as diffusion barriers against the migration of metal into semiconductors, and be thermally, chemically and mechanically stable. Specifically, the International Roadmap for Devices and Systems recommends4 the development of dielectrics with κ values of less than 2 by 2028. Existing low-κ materials (such as silicon oxide derivatives, organic compounds and aerogels) have κ values greater than 2 and poor thermo-mechanical properties5. Here we report three-nanometre-thick amorphous boron nitride films with ultralow κ values of 1.78 and 1.16 (close to that of air, κ = 1) at operation frequencies of 100 kilohertz and 1 megahertz, respectively. The films are mechanically and electrically robust, with a breakdown strength of 7.3 megavolts per centimetre, which exceeds requirements. Cross-sectional imaging reveals that amorphous boron nitride prevents the diffusion of cobalt atoms into silicon under very harsh conditions, in contrast to reference barriers. Our results demonstrate that amorphous boron nitride has excellent low-κ dielectric characteristics for high-performance electronics
URI
https://pr.ibs.re.kr/handle/8788114/7820
DOI
10.1038/s41586-020-2375-9
ISSN
0028-0836
Appears in Collections:
Center for Multidimensional Carbon Materials(다차원 탄소재료 연구단) > 1. Journal Papers (저널논문)
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