BROWSE

Related Scientist

cmcm's photo.

cmcm
다차원탄소재료연구단
more info

ITEM VIEW & DOWNLOAD

Ultralow-dielectric-constant amorphous boron nitride

Cited 0 time in webofscience Cited 0 time in scopus
545 Viewed 0 Downloaded
Title
Ultralow-dielectric-constant amorphous boron nitride
Author(s)
Seokmo Hong; Chang-Seok Lee; Min-Hyun Lee; Yeongdong Lee; Kyung Yeol Ma; Gwangwoo Kim; Seong In Yoon; Kyuwook Ihm; Ki-Jeong Kim; Tae Joo Shin; Sang Won Kim; Eun-chae Jeon; Hansol Jeon; Ju-Young Kim; Hyung-Ik Lee; Zonghoon Lee; Aleandro Antidormi; Stephan Roche; Manish Chhowalla; Hyeon-Jin Shin; Hyeon Suk Shin
Publication Date
2020-06
Journal
NATURE, v.582
Publisher
NATURE RESEARCH
Abstract
Decrease in processing speed due to increased resistance and capacitance delay is a major obstacle for the down-scaling of electronics(1-3). Minimizing the dimensions of interconnects (metal wires that connect different electronic components on a chip) is crucial for the miniaturization of devices. Interconnects are isolated from each other by non-conducting (dielectric) layers. So far, research has mostly focused on decreasing the resistance of scaled interconnects because integration of dielectrics using low-temperature deposition processes compatible with complementary metal-oxide-semiconductors is technically challenging. Interconnect isolation materials must have low relative dielectric constants (kappa values), serve as diffusion barriers against the migration of metal into semiconductors, and be thermally, chemically and mechanically stable. Specifically, the International Roadmap for Devices and Systems recommends(4) the development of dielectrics with kappa values of less than 2 by 2028. Existing low-kappa materials (such as silicon oxide derivatives, organic compounds and aerogels) have kappa values greater than 2 and poor thermo-mechanical properties(5). Here we report three-nanometre-thick amorphous boron nitride films with ultralow kappa values of 1.78 and 1.16 (close to that of air, kappa = 1) at operation frequencies of 100 kilohertz and 1 megahertz, respectively. The films are mechanically and electrically robust, with a breakdown strength of 7.3 megavolts per centimetre, which exceeds requirements. Cross-sectional imaging reveals that amorphous boron nitride prevents the diffusion of cobalt atoms into silicon under very harsh conditions, in contrast to reference barriers. Our results demonstrate that amorphous boron nitride has excellent low-kappa dielectric characteristics for high-performance electronics.
URI
https://pr.ibs.re.kr/handle/8788114/7820
DOI
10.1038/s41586-020-2375-9
ISSN
0028-0836
Appears in Collections:
Center for Multidimensional Carbon Materials(다차원 탄소재료 연구단) > 1. Journal Papers (저널논문)
Files in This Item:
There are no files associated with this item.

qrcode

  • facebook

    twitter

  • Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
해당 아이템을 이메일로 공유하기 원하시면 인증을 거치시기 바랍니다.

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse