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나노물질 및 화학반응 연구단
나노물질 및 화학반응 연구단
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Reliable Control of Filament Formation in Resistive Memories by Self-Assembled Nanoinsulators Derived from a Block Copolymer

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Title
Reliable Control of Filament Formation in Resistive Memories by Self-Assembled Nanoinsulators Derived from a Block Copolymer
Author(s)
You, BK; Park, WI; Kim, JM; Park, KI; Hyeon Kook Seo; Jeong Yong Lee; Jung, YS; Lee, KJ
Publication Date
2014-09
Journal
ACS NANO, v.8, no.9, pp.9492 - 9502
Publisher
AMER CHEMICAL SOC
Abstract
Resistive random access memory (ReRAM) is a promising candidate for future nonvolatile memories. Resistive switching in a metalinsulatormetal structure is generally assumed to be caused by the formation/rupture of nanoscale conductive filaments (CFs) under an applied electric field. The critical issue of ReRAM for practical memory applications, however, is insufficient repeatability of the operating voltage and resistance ratio. Here, we present an innovative approach to reliably and reproducibly control the CF growth in unipolar NiO resistive memory by exploiting uniform formation of insulating SiOx nanostructures from the self-assembly of a Si-containing block copolymer. In this way, the standard deviation (SD) of set and reset voltages was markedly reduced by 76.9% and 59.4%, respectively. The SD of high resistance state also decreased significantly, from 6.3 107 Ω to 5.4 104 Ω. Moreover, we report direct observations of localized metallic Ni CF formation and their controllable growth using electron microscopy and discuss electrothermal simulation results based on the finite element method supporting our analysis results.
URI
https://pr.ibs.re.kr/handle/8788114/777
ISSN
1936-0851
Appears in Collections:
Center for Nanomaterials and Chemical Reactions(나노물질 및 화학반응 연구단) > Journal Papers (저널논문)
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