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Enhanced Thermoelectric Performance of p-Type Bi-Sb-Te Alloys by Codoping with Ga and Ag

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dc.contributor.authorLee K.H.-
dc.contributor.authorChoi S.-M.-
dc.contributor.authorRoh J.W.-
dc.contributor.authorHwang S.-
dc.contributor.authorKim S.I.-
dc.contributor.authorShin W.H.-
dc.contributor.authorPark H.J.-
dc.contributor.authorLee J.H.-
dc.contributor.authorSung Wng Kim-
dc.contributor.authorYang D.J.-
dc.date.available2015-04-19T10:57:23Z-
dc.date.created2015-01-21-
dc.date.issued2015-06-
dc.identifier.issn0361-5235-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/768-
dc.description.abstractWe report an enhancement of the thermoelectric performance in spark-plasma- sintered polycrystalline p-type Bi0.42Sb1.58Te3 by codoping with Ga and Ag at Bi/Sb-site. Through controlled doping of Ga (n-type) and Ag (p-type), electronic transport properties including the electrical conductivity (988 S/cm at 300 K) and power factor (3.91 mW m1 K2 at 300 K) could be maintained at values comparable to those of pristine Bi0.42Sb1.58Te3, while the lattice thermal conductivity was significantly reduced due to point-defect phonon scattering originating from the mass difference between the host atoms (Bi and Sb) and dopants (Ga and Ag). Through these synergetic effects, a peak ZT of 1.15 was obtained in Bi0.42Sb1.5535Ga0.025Ag0.0015Te3 at 360 K, and ZT could be engineered to be over 1.0 for a wide temperature range (300 K to 420 K).-
dc.description.uri1-
dc.language영어-
dc.publisherSPRINGER-
dc.subjectThermoelectric, codoping, lattice thermal conductivity, point defects, phonon scattering-
dc.titleEnhanced Thermoelectric Performance of p-Type Bi-Sb-Te Alloys by Codoping with Ga and Ag-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000353813700024-
dc.identifier.scopusid2-s2.0-84939943468-
dc.identifier.rimsid16432ko
dc.date.tcdate2018-10-01-
dc.contributor.affiliatedAuthorSung Wng Kim-
dc.identifier.doi10.1007/s11664-014-3446-1-
dc.identifier.bibliographicCitationJOURNAL OF ELECTRONIC MATERIALS, v.44, no.6, pp.1531 - 1535-
dc.citation.titleJOURNAL OF ELECTRONIC MATERIALS-
dc.citation.volume44-
dc.citation.number6-
dc.citation.startPage1531-
dc.citation.endPage1535-
dc.date.scptcdate2018-10-01-
dc.description.wostc9-
dc.description.scptc9-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordPlusTELLURIDE-
dc.subject.keywordAuthorThermoelectric-
dc.subject.keywordAuthorcodoping-
dc.subject.keywordAuthorlattice thermal conductivity-
dc.subject.keywordAuthorpoint defects-
dc.subject.keywordAuthorphonon scattering-
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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