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Layer-controlled single-crystalline graphene film with stacking order via Cu-Si alloy formation

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dc.contributor.authorVan Luan Nguyen-
dc.contributor.authorDinh Loc Duong-
dc.contributor.authorSang Hyub Lee-
dc.contributor.authorJosé Avila-
dc.contributor.authorGyeongtak Han-
dc.contributor.authorYoung-Min Kim-
dc.contributor.authorMaria C. Asensio-
dc.contributor.authorSe-Young Jeong-
dc.contributor.authorYoung Hee Lee-
dc.date.accessioned2020-12-22T02:32:55Z-
dc.date.accessioned2020-12-22T02:32:55Z-
dc.date.available2020-12-22T02:32:55Z-
dc.date.available2020-12-22T02:32:55Z-
dc.date.created2020-09-09-
dc.date.issued2020-10-
dc.identifier.issn1748-3387-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/7613-
dc.description.abstract© The Author(s), under exclusive licence to Springer Nature Limited 2020 Well-controlled multilayer graphene up to four layers thick with a defined stacking sequence is synthesized via SiC alloy formation on a Cu(111) substrate. Multilayer graphene and its stacking order provide both fundamentally intriguing properties and technological engineering applications. Several approaches to control the stacking order have been demonstrated, but a method of precisely controlling the number of layers with desired stacking sequences is still lacking. Here, we propose an approach for controlling the layer thickness and crystallographic stacking sequence of multilayer graphene films at the wafer scale via Cu-Si alloy formation using direct chemical vapour deposition. C atoms are introduced by tuning the ultra-low-limit CH(4)concentration to form a SiC layer, reaching one to four graphene layers at the wafer scale after Si sublimation. The crystallographic structure of single-crystalline or uniformly oriented bilayer (AB), trilayer (ABA) and tetralayer (ABCA) graphene are determined via nano-angle-resolved photoemission spectroscopy, which agrees with theoretical calculations, Raman spectroscopy and transport measurements. The present study takes a step towards the layer-controlled growth of graphite and other two-dimensional materials-
dc.description.uri1-
dc.language영어-
dc.publisherNATURE PUBLISHING GROUP-
dc.subjectBILAYER GRAPHENE-
dc.subjectHIGH-QUALITY-
dc.subjectBAND-GAP-
dc.subjectNI ALLOY-
dc.subjectCVD GROWTH-
dc.subjectTRANSPORT-
dc.subjectSUBSTRATE-
dc.subjectABC-
dc.titleLayer-controlled single-crystalline graphene film with stacking order via Cu-Si alloy formation-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000552922700002-
dc.identifier.scopusid2-s2.0-85088573067-
dc.identifier.rimsid72968-
dc.contributor.affiliatedAuthorVan Luan Nguyen-
dc.contributor.affiliatedAuthorDinh Loc Duong-
dc.contributor.affiliatedAuthorSang Hyub Lee-
dc.contributor.affiliatedAuthorGyeongtak Han-
dc.contributor.affiliatedAuthorYoung-Min Kim-
dc.contributor.affiliatedAuthorYoung Hee Lee-
dc.identifier.doi10.1038/s41565-020-0743-0-
dc.identifier.bibliographicCitationNATURE NANOTECHNOLOGY, v.15, no.10, pp.861 - 867-
dc.citation.titleNATURE NANOTECHNOLOGY-
dc.citation.volume15-
dc.citation.number10-
dc.citation.startPage861-
dc.citation.endPage867-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordPlusBILAYER GRAPHENE-
dc.subject.keywordPlusHIGH-QUALITY-
dc.subject.keywordPlusBAND-GAP-
dc.subject.keywordPlusNI ALLOY-
dc.subject.keywordPlusCVD GROWTH-
dc.subject.keywordPlusTRANSPORT-
dc.subject.keywordPlusSUBSTRATE-
dc.subject.keywordPlusABC-
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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