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Bandgap Renormalization in Monolayer MoS2 on CsPbBr3 Quantum Dots via Charge Transfer at Room Temperature

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dc.contributor.authorSubash Adhikari-
dc.contributor.authorJi-Hee Kim-
dc.contributor.authorBumsub Song-
dc.contributor.authorManh-Ha Doan-
dc.contributor.authorMinh Dao Tran-
dc.contributor.authorLeyre Gomez-
dc.contributor.authorHyun Kim-
dc.contributor.authorHamza Zad Gul-
dc.contributor.authorGanesh Ghimire-
dc.contributor.authorSeok Joon Yun-
dc.contributor.authorTom Gregorkiewicz-
dc.contributor.authorYoung Hee Lee-
dc.date.accessioned2020-12-22T02:24:34Z-
dc.date.accessioned2020-12-22T02:24:34Z-
dc.date.available2020-12-22T02:24:34Z-
dc.date.available2020-12-22T02:24:34Z-
dc.date.created2020-10-14-
dc.date.issued2020-11-
dc.identifier.issn2196-7350-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/7567-
dc.description.abstractCopyright © 1999-2020 John Wiley & Sons, Inc. All rights reserved Many‐body effect and strong Coulomb interaction in monolayer transition metal dichalcogenides lead to intrinsic bandgap shrinking, originating from the renormalization of electrical/optical bandgap, exciton binding energy, and spin‐orbit splitting. This renormalization phenomenon has been commonly observed at low temperature and requires high photon excitation density. Here, the augmented bandgap renormalization (BGR) in monolayer MoS2 anchored on CsPbBr3 perovskite quantum dots at room temperature via charge transfer is presented. The amount of electrons significantly transferred from perovskite gives rise to the large plasma screening in MoS2. The bandgap in heterostructure is red‐shifted by 84 meV with minimal pump fluence, the highest BGR in monolayer MoS2 at room temperature, which saturates with a further increase of pump fluence. Further, it is found that the magnitude of BGR inversely relates to Thomas–Fermi screening length. This provides plenty of room to explore the BGR within existing vast libraries of large bandgap van der Waals heterostructure toward practical devices such as solar cells, photodetectors, and light‐emitting‐diodes.-
dc.description.uri1-
dc.language영어-
dc.publisherWILEY-
dc.subjectbandgap renormalization-
dc.subjectcharge transfer-
dc.subjectCsPbBr3 quantum dots-
dc.subjectMoS2 monolayers-
dc.subjectroom temperature-
dc.titleBandgap Renormalization in Monolayer MoS2 on CsPbBr3 Quantum Dots via Charge Transfer at Room Temperature-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000571196700001-
dc.identifier.scopusid2-s2.0-85091160903-
dc.identifier.rimsid73258-
dc.contributor.affiliatedAuthorSubash Adhikari-
dc.contributor.affiliatedAuthorJi-Hee Kim-
dc.contributor.affiliatedAuthorBumsub Song-
dc.contributor.affiliatedAuthorManh-Ha Doan-
dc.contributor.affiliatedAuthorMinh Dao Tran-
dc.contributor.affiliatedAuthorHyun Kim-
dc.contributor.affiliatedAuthorHamza Zad Gul-
dc.contributor.affiliatedAuthorGanesh Ghimire-
dc.contributor.affiliatedAuthorSeok Joon Yun-
dc.contributor.affiliatedAuthorYoung Hee Lee-
dc.identifier.doi10.1002/admi.202000835-
dc.identifier.bibliographicCitationADVANCED MATERIALS INTERFACES, v.7, no.21, pp.2000835-
dc.citation.titleADVANCED MATERIALS INTERFACES-
dc.citation.volume7-
dc.citation.number21-
dc.citation.startPage2000835-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordPlusELECTRONIC-PROPERTIES-
dc.subject.keywordPlusSTRAINED MONOLAYER-
dc.subject.keywordPlusMANY-BODY-
dc.subject.keywordPlusTRANSITION-
dc.subject.keywordPlusMOS2-
dc.subject.keywordPlusNANOCRYSTALS-
dc.subject.keywordPlusSTABILITY-
dc.subject.keywordPlusTRIONS-
dc.subject.keywordPlusCSPBX3-
dc.subject.keywordPlusMONO-
dc.subject.keywordAuthorbandgap renormalization-
dc.subject.keywordAuthorcharge transfer-
dc.subject.keywordAuthorCsPbBr(3)quantum dots-
dc.subject.keywordAuthorMoS(2)monolayers-
dc.subject.keywordAuthorroom temperature-
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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