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Hot electron effects and electric field scaling near the metal-insulator transition in multilayer MoS2

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dc.contributor.authorByoung Hee Moon-
dc.contributor.authorGang Hee Han-
dc.contributor.authorYoung Hee Lee-
dc.date.available2020-10-14T08:15:37Z-
dc.date.created2020-02-17-
dc.date.issued2020-01-
dc.identifier.issn2469-9950-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/7267-
dc.description.abstractThe layered transition metal dichalcogenides have emerged as valuable platforms to study the challenging problem of metal-insulator transition in two dimensions. It was demonstrated that multilayer MoS2 exhibits clearly distinctive metallic and insulating behaviors in conductivity in response to both temperature and the electric field. Here, we report on the scaling analyses of conductivity for the electric field in addition to the temperature, which is performed with the consideration of electron-electron interactions for multilayer MoS2. Based on the analysis of hot electron effects in the electric field, we find that scaling for the electric field is relevant for the metallic phase in the high-field regime, enabling one to extract the dynamical critical exponent z close to 1. This result supports that the metal-insulator transition in multilayer MoS2 is a true quantum critical phenomenon, in which strong interactions induce the transition. ©2020 American Physical Society-
dc.description.uri1-
dc.language영어-
dc.publisherAMER PHYSICAL SOC-
dc.titleHot electron effects and electric field scaling near the metal-insulator transition in multilayer MoS2-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000509483000002-
dc.identifier.scopusid2-s2.0-85078733977-
dc.identifier.rimsid71342-
dc.contributor.affiliatedAuthorByoung Hee Moon-
dc.contributor.affiliatedAuthorGang Hee Han-
dc.contributor.affiliatedAuthorYoung Hee Lee-
dc.identifier.doi10.1103/PhysRevB.101.035421-
dc.identifier.bibliographicCitationPHYSICAL REVIEW B, v.101, no.3, pp.035421-
dc.citation.titlePHYSICAL REVIEW B-
dc.citation.volume101-
dc.citation.number3-
dc.citation.startPage035421-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordPlusHOPPING CONDUCTIVITY-
dc.subject.keywordPlusCOULOMB GAP-
dc.subject.keywordPlusLOCALIZATION-
dc.subject.keywordPlusB=0-
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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