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복잡계 이론물리 연구단
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Optical Transistor for Amplification of Radiation in a Broadband Terahertz Domain

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Title
Optical Transistor for Amplification of Radiation in a Broadband Terahertz Domain
Author(s)
K. H. A. Villegas; F. V. Kusmartsev; Y. Luo; I. G. Savenko
Publication Date
2020-02
Journal
PHYSICAL REVIEW LETTERS, v.124, no.8, pp.087701 -
Publisher
AMER PHYSICAL SOC
Abstract
We propose a new type of optical transistor for a broadband amplification of terahertz radiation. It is made of a graphene-superconductor hybrid, where electrons and Cooper pairs couple by Coulomb forces. The transistor operates via the propagation of surface plasmons in both layers, and the origin of amplification is the quantum capacitance of graphene. It leads to terahertz waves amplification, the negative power absorption, and as a result, the system yields positive gain, and the hybrid acts like an optical transistor, operating with the terahertz light. It can, in principle, amplify even a whole spectrum of chaotic signals (or noise), which is required for numerous biological applications. © 2020 American Physical Society
URI
https://pr.ibs.re.kr/handle/8788114/7173
ISSN
0031-9007
Appears in Collections:
Center for Theoretical Physics of Complex Systems(복잡계 이론물리 연구단) > Journal Papers (저널논문)
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