BROWSE

Related Scientist

cinap's photo.

cinap
나노구조물리연구단
more info

ITEM VIEW & DOWNLOAD

Schottky Barrier Variable Graphene/Multilayer-MoS2 Heterojunction Transistor Used to Overcome Short Channel Effects

DC Field Value Language
dc.contributor.authorIlmin Lee-
dc.contributor.authorJoo Nam Kim-
dc.contributor.authorWon Tae Kang-
dc.contributor.authorYong Seon Shin-
dc.contributor.authorBoo Hueng Lee-
dc.contributor.authorWoo Jong Yu-
dc.date.available2020-03-18T08:18:35Z-
dc.date.created2020-02-17-
dc.date.issued2020-01-
dc.identifier.issn1944-8244-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/7054-
dc.description.abstractA single-layer MoS2 achieves excellent gate controllability within the nanoscale channel length of a field-effect transistor (FET) owing to an ultra-short screening length. However, multilayer MoS2 (ML-MoS2) is more vulnerable to short channel effects (SCEs) owing to its thickness and long screening length. We eliminated the SCEs in an ML-MoS2 FET (thickness of 4-13 nm) at a channel length of sub-30 nm using a Schottky barrier (SB) variable graphene/ML-MoS2 heterojunction. Although the band modulation in the ML-MoS2 channel worsens with a decrease in the channel length, which is similar to the SCEs occurring in conventional FETs, the variable Fermi level (EF) of a graphene electrode along the gate voltage allows control of the SB at the graphene/MoS2 junction and backs up the current modulation through a variable SB. Electrical measurements and a theoretical band simulation demonstrate the efficient SB modulation of our graphene nanogap (GrNG) ML-MoS2 FET with three distinct carrier transports along Vgs: a thermionic emission at a low SB, Fowler-Nordheim tunneling at a moderate SB, and direct tunneling at a high SB. Our GrNG FET shows an extremely high on-off current ratio of ∼108, which is approximately three-orders of magnitude better than a previously reported metal nanogap (MeNG) FET and a self-aligned metal/graphene nanogap FET with a similar MoS2 thickness. Our GrNG FET also exhibits a 100,000-times higher on-off ratio, 100-times lower subthreshold swing, and 10-times lower drain induced barrier. © 2019 American Chemical Society-
dc.description.uri1-
dc.language영어-
dc.publisherAMER CHEMICAL SOC-
dc.subjectfield effect transistor-
dc.subjectgraphene-
dc.subjectmolybdenum disulfide-
dc.subjectschottky barrier height-
dc.subjectshort channel effect-
dc.titleSchottky Barrier Variable Graphene/Multilayer-MoS2 Heterojunction Transistor Used to Overcome Short Channel Effects-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000508464500096-
dc.identifier.scopusid2-s2.0-85077946329-
dc.identifier.rimsid71189-
dc.contributor.affiliatedAuthorWon Tae Kang-
dc.contributor.affiliatedAuthorYong Seon Shin-
dc.identifier.doi10.1021/acsami.9b18577-
dc.identifier.bibliographicCitationACS APPLIED MATERIALS & INTERFACES, v.12, no.2, pp.2854 - 2861-
dc.citation.titleACS APPLIED MATERIALS & INTERFACES-
dc.citation.volume12-
dc.citation.number2-
dc.citation.startPage2854-
dc.citation.endPage2861-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordAuthorfield effect transistor-
dc.subject.keywordAuthorgraphene-
dc.subject.keywordAuthormolybdenum disulfide-
dc.subject.keywordAuthorschottky barrier height-
dc.subject.keywordAuthorshort channel effect-
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
Files in This Item:
Schottky Barrier_ACS Applied Materials and Interfaces_Woo Jong Yu.pdfDownload

qrcode

  • facebook

    twitter

  • Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
해당 아이템을 이메일로 공유하기 원하시면 인증을 거치시기 바랍니다.

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse