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Novel high-k gate dielectric properties of ultrathin hydrocarbon films for next-generation metal-insulator-semiconductor devices

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Title
Novel high-k gate dielectric properties of ultrathin hydrocarbon films for next-generation metal-insulator-semiconductor devices
Author(s)
Kim D.-O.; Hong H.-K.; Seo D.-B.; Trung T.N.; Hwang C.-C.; Zonghoon Lee; Kim E.-T.
Publication Date
2020-03
Journal
CARBON, v.158, no., pp.513 - 518
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Abstract
© 2019 Elsevier LtdNew high-k gate dielectrics are highly necessary in facilitating the continuous down-scaling of metal–oxide–semiconductor devices to the sub-10 nm range. This study presents ultrathin organic hydrocarbon (HC) films as a novel high-k gate insulator for metal–insulator–semiconductor (MIS) devices. During inductively-coupled plasma chemical vapor deposition with CH4 and H2 gases, the growth temperature greatly affects the structure of the carbon layers and consequently their dielectric characteristics. Specifically, sp2-rich dielectric HC layers are formed below 600 °C, whereas highly-ordered sp2-hybridized graphene is formed at 950 °C. The k value of the resulting HC films increases up to a maximum value of 90 at 350 °C. Moreover, the MIS devices exhibit excellent gate-insulating properties, including almost no hysteresis in the capacitance–voltage curve, low leakage current, and high dielectric strength, which surpass those of existing high-k gate oxides. These results reveal that the organic HC films are a promising next-generation high-k gate dielectric material for sub-10 nm node Si and organic semiconductor technologies
URI
https://pr.ibs.re.kr/handle/8788114/6985
ISSN
0008-6223
Appears in Collections:
Center for Multidimensional Carbon Materials(다차원 탄소재료 연구단) > Journal Papers (저널논문)
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