Novel high-k gate dielectric properties of ultrathin hydrocarbon films for next-generation metal-insulator-semiconductor devices
DC Field | Value | Language |
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dc.contributor.author | Kim D.-O. | - |
dc.contributor.author | Hong H.-K. | - |
dc.contributor.author | Seo D.-B. | - |
dc.contributor.author | Trung T.N. | - |
dc.contributor.author | Hwang C.-C. | - |
dc.contributor.author | Zonghoon Lee | - |
dc.contributor.author | Kim E.-T. | - |
dc.date.available | 2020-03-18T08:16:25Z | - |
dc.date.created | 2019-12-16 | - |
dc.date.issued | 2020-03 | - |
dc.identifier.issn | 0008-6223 | - |
dc.identifier.uri | https://pr.ibs.re.kr/handle/8788114/6985 | - |
dc.description.abstract | © 2019 Elsevier LtdNew high-k gate dielectrics are highly necessary in facilitating the continuous down-scaling of metal–oxide–semiconductor devices to the sub-10 nm range. This study presents ultrathin organic hydrocarbon (HC) films as a novel high-k gate insulator for metal–insulator–semiconductor (MIS) devices. During inductively-coupled plasma chemical vapor deposition with CH4 and H2 gases, the growth temperature greatly affects the structure of the carbon layers and consequently their dielectric characteristics. Specifically, sp2-rich dielectric HC layers are formed below 600 °C, whereas highly-ordered sp2-hybridized graphene is formed at 950 °C. The k value of the resulting HC films increases up to a maximum value of 90 at 350 °C. Moreover, the MIS devices exhibit excellent gate-insulating properties, including almost no hysteresis in the capacitance–voltage curve, low leakage current, and high dielectric strength, which surpass those of existing high-k gate oxides. These results reveal that the organic HC films are a promising next-generation high-k gate dielectric material for sub-10 nm node Si and organic semiconductor technologies | - |
dc.description.uri | 1 | - |
dc.language | 영어 | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.title | Novel high-k gate dielectric properties of ultrathin hydrocarbon films for next-generation metal-insulator-semiconductor devices | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.identifier.wosid | 000512995800053 | - |
dc.identifier.scopusid | 2-s2.0-85075401183 | - |
dc.identifier.rimsid | 70707 | - |
dc.contributor.affiliatedAuthor | Zonghoon Lee | - |
dc.identifier.doi | 10.1016/j.carbon.2019.11.019 | - |
dc.identifier.bibliographicCitation | CARBON, v.158, pp.513 - 518 | - |
dc.citation.title | CARBON | - |
dc.citation.volume | 158 | - |
dc.citation.startPage | 513 | - |
dc.citation.endPage | 518 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Gate dielectrics | - |
dc.subject.keywordAuthor | High-k dielectrics | - |
dc.subject.keywordAuthor | Hydrocarbons | - |
dc.subject.keywordAuthor | Metal oxide semiconductors | - |