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강상관계 물질 연구단
강상관계 물질 연구단
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First Observation of Ferroelectricity in ∼1 nm Ultrathin Semiconducting BaTiO 3 Films

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Title
First Observation of Ferroelectricity in ∼1 nm Ultrathin Semiconducting BaTiO 3 Films
Author(s)
Seung Ran Lee; Lkhagvasuren Baasandorj; Jung Won Chang; In Woong Hwang; Jeong Rae Kim; Jeong-Gyu Kim; Kyung-Tae Ko; Seung Bo Shim; Min Woo Choi; Mujin You; Chan-Ho Yang; Jinhee Kim; Jonghyun Song
Publication Date
2019-04
Journal
NANO LETTERS, v.19, no.4, pp.2243 - 2250
Publisher
AMER CHEMICAL SOC
Abstract
The requirements of multifunctionality in thin-film systems have led to the discovery of unique physical properties and degrees of freedom, which exist only in film forms. With progress in growth techniques, one can decrease the film thickness to the scale of a few nanometers (∼nm), where its unique physical properties are still pronounced. Among advanced ultrathin film systems, ferroelectrics have generated tremendous interest. As a prototype ferroelectric, the electrical properties of BaTiO 3 (BTO) films have been extensively studied, and it has been theoretically predicted that ferroelectricity sustains down to ∼nm thick films. However, efforts toward determining the minimum thickness for ferroelectric films have been hindered by practical issues surrounding large leakage currents. In this study, we used ∼nm thick BTO films, exhibiting semiconducting characteristics, grown on a LaAlO 3 /SrTiO 3 (LAO/STO) heterostructure. In particular, we utilized two-dimensional electron gas at the LAO/STO heterointerface as the bottom electrode in these capacitor junctions. We demonstrate that the BTO film exhibits ferroelectricity at room temperature, even when it is only ∼2 unit-cells thick, and the total thickness of the capacitor junction can be reduced to less than ∼4 nm. Observation of ferroelectricity in ultrathin semiconducting films and the resulting shrunken capacitor thickness will expand the applicability of ferroelectrics in the next generation of functional devices. © 2019 American Chemical Society
URI
https://pr.ibs.re.kr/handle/8788114/6473
ISSN
1530-6984
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > Journal Papers (저널논문)
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