BROWSE

Related Scientist

Researcher

다차원 탄소재료 연구단
다차원 탄소재료 연구단
more info

Epitaxial growth of a 100-square-centimetre single-crystal hexagonal boron nitride monolayer on copper

Cited 0 time in webofscience Cited 0 time in scopus
11 Viewed 1 Downloaded
Title
Epitaxial growth of a 100-square-centimetre single-crystal hexagonal boron nitride monolayer on copper
Author(s)
Wang L.; Xu X.; Leining Zhang; Qiao R.; Wu M.; Wang Z.; Zhang S.; Liang J.; Zhang Z.; Zhang Z.; Chen W.; Xie X.; Zong J.; Shan Y.; Guo Y.; Willinger M.; Wu H.; Li Q.; Wang W.; Gao P.; Wu S.; Zhang Y.; Jiang Y.; Yu D.; Wang E.; Bai X.; Wang Z.-J.; Feng Ding; Liu K.
Publication Date
2019-06
Journal
NATURE, v.570, no.7759, pp.91 - +
Publisher
NATURE PUBLISHING GROUP
Abstract
© 2019, The Author(s), under exclusive licence to Springer Nature Limited.The development of two-dimensional (2D) materials has opened up possibilities for their application in electronics, optoelectronics and photovoltaics, because they can provide devices with smaller size, higher speed and additional functionalities compared with conventional silicon-based devices1. The ability to grow large, high-quality single crystals for 2D components—that is, conductors, semiconductors and insulators—is essential for the industrial application of 2D devices2–4. Atom-layered hexagonal boron nitride (hBN), with its excellent stability, flat surface and large bandgap, has been reported to be the best 2D insulator5–12. However, the size of 2D hBN single crystals is typically limited to less than one millimetre13–18, mainly because of difficulties in the growth of such crystals; these include excessive nucleation, which precludes growth from a single nucleus to large single crystals, and the threefold symmetry of the hBN lattice, which leads to antiparallel domains and twin boundaries on most substrates19. Here we report the epitaxial growth of a 100-square-centimetre single-crystal hBN monolayer on a low-symmetry Cu (110) vicinal surface, obtained by annealing an industrial copper foil. Structural characterizations and theoretical calculations indicate that epitaxial growth was achieved by the coupling of Cu <211> step edges with hBN zigzag edges, which breaks the equivalence of antiparallel hBN domains, enabling unidirectional domain alignment better than 99 per cent. The growth kinetics, unidirectional alignment and seamless stitching of the hBN domains are unambiguously demonstrated using centimetre- to atomic-scale characterization techniques. Our findings are expected to facilitate the wide application of 2D devices and lead to the epitaxial growth of broad non-centrosymmetric 2D materials, such as various transition-metal dichalcogenides20–23, to produce large single crystals
URI
https://pr.ibs.re.kr/handle/8788114/6462
ISSN
0028-0836
Appears in Collections:
Center for Multidimensional Carbon Materials(다차원 탄소재료 연구단) > Journal Papers (저널논문)
Files in This Item:
03 Nature.pdfDownload

qrcode

  • facebook

    twitter

  • Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
해당 아이템을 이메일로 공유하기 원하시면 인증을 거치시기 바랍니다.

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse