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다차원 탄소재료 연구단
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Polarization modulation effect of BeO on AlGaN/GaN high-electron-mobility transistors

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Title
Polarization modulation effect of BeO on AlGaN/GaN high-electron-mobility transistors
Author(s)
Wang W.; Lee S.M.; Pouladi S.; Chen J.; Shervin S.; Yoon S.; Jung Hwan Yum; Eric S. Larsen; Christopher W. Bielawski; Chatterjee B.; Choi S.; Oh J.; Ryou J.-H.
Publication Date
2019-09
Journal
APPLIED PHYSICS LETTERS, v.115, no.10, pp.103502 -
Publisher
AMER INST PHYSICS
Abstract
© 2019 Author(s).We investigate the polarization modulation effect of a single-crystalline BeO layer on AlGaN/GaN high-electron-mobility transistors (HEMTs). The BeO layer with macroscopic polarization on top of the AlGaN barrier layer increases the 2-dimensional electron gas density in the triangular quantum well (QW) at the interface of the AlGaN/GaN heterostructure. Electronic band bending of BeO and a deeper triangular QW observed from the simulated conduction band profile indicate that the BeO layer can modify the polarization field at the AlGaN/GaN interface. A ∼20-nm-thick single-crystalline BeO thin film is grown on AlGaN/GaN HEMTs by atomic-layer deposition. Room-temperature and variable-temperature Hall-effect measurements confirm that the HEMT with BeO forms a channel with a 14% increase of the sheet carrier concentration as compared with a conventional HEMT. An improved output performance is also observed in the I-V characteristics which confirms the polarization modulation effect of the BeO layer
URI
https://pr.ibs.re.kr/handle/8788114/6428
ISSN
0003-6951
Appears in Collections:
Center for Multidimensional Carbon Materials(다차원 탄소재료 연구단) > Journal Papers (저널논문)
Files in This Item:
08 1.5108832.pdfDownload

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