Anomalous Conductance near Percolative Metal-Insulator Transition in Monolayer MoS2 at Low Voltage Regime
DC Field | Value | Language |
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dc.contributor.author | Byoung Hee Moon | - |
dc.contributor.author | Jung Jun Bae | - |
dc.contributor.author | Gang Hee Han | - |
dc.contributor.author | Hyun Kim | - |
dc.contributor.author | Homin Choi | - |
dc.contributor.author | Young Hee Lee | - |
dc.date.available | 2019-09-25T07:25:14Z | - |
dc.date.created | 2019-07-23 | - |
dc.date.issued | 2019-06 | - |
dc.identifier.issn | 1936-0851 | - |
dc.identifier.uri | https://pr.ibs.re.kr/handle/8788114/6162 | - |
dc.description.abstract | Conductivity of the insulating phase increases generally at an elevated drain source voltage due to the field-enhanced hopping or heating effect. Meanwhile, a transport mechanism governed by percolation in a low compensated semiconductor gives rise to the reduced conductivity at a low field regime. Here, in addition to this behavior, we report the anomalous conductivity behavior to transform from a percolative metallic to an insulating phase at the low voltage regime in monolayer molybdenum disulfide (MoS2). Percolation transport at low source-drain voltage is governed by inhomogeneously distributed potential in strongly interacting monolayer MoS2 with a substrate, distinct from the quantum phase transition in multilayer MoS2. At a high source-drain voltage regime, the insulating phase is transformed further to a metallic phase, exhibiting multiphases of metallic-insulating-metallic transitions in monolayer MoS2. These behaviors highlight MoS2 as a model system to study various classical and quantum transports as well as metal-insulator transition in two-dimensional systems. © 2019 American Chemical Society | - |
dc.description.uri | 1 | - |
dc.language | 영어 | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | monolayer MoS2 | - |
dc.subject | anomalous conductivity behavior | - |
dc.subject | voltage-induced transitions | - |
dc.subject | percolation | - |
dc.subject | metal-insulator transition | - |
dc.title | Anomalous Conductance near Percolative Metal-Insulator Transition in Monolayer MoS2 at Low Voltage Regime | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.identifier.wosid | 000473248300048 | - |
dc.identifier.scopusid | 2-s2.0-85068319508 | - |
dc.identifier.rimsid | 69082 | - |
dc.contributor.affiliatedAuthor | Byoung Hee Moon | - |
dc.contributor.affiliatedAuthor | Gang Hee Han | - |
dc.contributor.affiliatedAuthor | Hyun Kim | - |
dc.contributor.affiliatedAuthor | Homin Choi | - |
dc.contributor.affiliatedAuthor | Young Hee Lee | - |
dc.identifier.doi | 10.1021/acsnano.9b00755 | - |
dc.identifier.bibliographicCitation | ACS NANO, v.13, no.6, pp.6631 - 6637 | - |
dc.citation.title | ACS NANO | - |
dc.citation.volume | 13 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 6631 | - |
dc.citation.endPage | 6637 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | ELECTRIC-FIELD | - |
dc.subject.keywordPlus | ANDERSON LOCALIZATION | - |
dc.subject.keywordPlus | HOPPING-CONDUCTIVITY | - |
dc.subject.keywordPlus | VALLEY POLARIZATION | - |
dc.subject.keywordPlus | LAYER MOS2 | - |
dc.subject.keywordPlus | B=0 | - |
dc.subject.keywordPlus | MOTT | - |
dc.subject.keywordPlus | GAP | - |
dc.subject.keywordAuthor | monolayer MoS2 | - |
dc.subject.keywordAuthor | anomalous conductivity behavior | - |
dc.subject.keywordAuthor | voltage-induced transitions | - |
dc.subject.keywordAuthor | percolation | - |
dc.subject.keywordAuthor | metal-insulator transition | - |