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Anomalous Conductance near Percolative Metal-Insulator Transition in Monolayer MoS2 at Low Voltage Regime

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dc.contributor.authorByoung Hee Moon-
dc.contributor.authorJung Jun Bae-
dc.contributor.authorGang Hee Han-
dc.contributor.authorHyun Kim-
dc.contributor.authorHomin Choi-
dc.contributor.authorYoung Hee Lee-
dc.date.available2019-09-25T07:25:14Z-
dc.date.created2019-07-23-
dc.date.issued2019-06-
dc.identifier.issn1936-0851-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/6162-
dc.description.abstractConductivity of the insulating phase increases generally at an elevated drain source voltage due to the field-enhanced hopping or heating effect. Meanwhile, a transport mechanism governed by percolation in a low compensated semiconductor gives rise to the reduced conductivity at a low field regime. Here, in addition to this behavior, we report the anomalous conductivity behavior to transform from a percolative metallic to an insulating phase at the low voltage regime in monolayer molybdenum disulfide (MoS2). Percolation transport at low source-drain voltage is governed by inhomogeneously distributed potential in strongly interacting monolayer MoS2 with a substrate, distinct from the quantum phase transition in multilayer MoS2. At a high source-drain voltage regime, the insulating phase is transformed further to a metallic phase, exhibiting multiphases of metallic-insulating-metallic transitions in monolayer MoS2. These behaviors highlight MoS2 as a model system to study various classical and quantum transports as well as metal-insulator transition in two-dimensional systems. © 2019 American Chemical Society-
dc.description.uri1-
dc.language영어-
dc.publisherAMER CHEMICAL SOC-
dc.subjectmonolayer MoS2-
dc.subjectanomalous conductivity behavior-
dc.subjectvoltage-induced transitions-
dc.subjectpercolation-
dc.subjectmetal-insulator transition-
dc.titleAnomalous Conductance near Percolative Metal-Insulator Transition in Monolayer MoS2 at Low Voltage Regime-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000473248300048-
dc.identifier.scopusid2-s2.0-85068319508-
dc.identifier.rimsid69082-
dc.contributor.affiliatedAuthorByoung Hee Moon-
dc.contributor.affiliatedAuthorGang Hee Han-
dc.contributor.affiliatedAuthorHyun Kim-
dc.contributor.affiliatedAuthorHomin Choi-
dc.contributor.affiliatedAuthorYoung Hee Lee-
dc.identifier.doi10.1021/acsnano.9b00755-
dc.identifier.bibliographicCitationACS NANO, v.13, no.6, pp.6631 - 6637-
dc.citation.titleACS NANO-
dc.citation.volume13-
dc.citation.number6-
dc.citation.startPage6631-
dc.citation.endPage6637-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordPlusELECTRIC-FIELD-
dc.subject.keywordPlusANDERSON LOCALIZATION-
dc.subject.keywordPlusHOPPING-CONDUCTIVITY-
dc.subject.keywordPlusVALLEY POLARIZATION-
dc.subject.keywordPlusLAYER MOS2-
dc.subject.keywordPlusB=0-
dc.subject.keywordPlusMOTT-
dc.subject.keywordPlusGAP-
dc.subject.keywordAuthormonolayer MoS2-
dc.subject.keywordAuthoranomalous conductivity behavior-
dc.subject.keywordAuthorvoltage-induced transitions-
dc.subject.keywordAuthorpercolation-
dc.subject.keywordAuthormetal-insulator transition-
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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