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Self-selective van der Waals heterostructures for large scale memory array

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dc.contributor.authorLinfeng Sun-
dc.contributor.authorYishu Zhang-
dc.contributor.authorGyeongtak Han-
dc.contributor.authorGeunwoo Hwang-
dc.contributor.authorJinbao Jiang-
dc.contributor.authorBomin Joo-
dc.contributor.authorKenji Watanabe-
dc.contributor.authorTakashi Taniguchi-
dc.contributor.authorYoung-Min Kim-
dc.contributor.authorWoo Jong Yu-
dc.contributor.authorBai-Sun Kong-
dc.contributor.authorRong Zhao-
dc.contributor.authorHeejun Yang-
dc.date.available2019-09-25T07:24:31Z-
dc.date.created2019-08-20-
dc.date.issued2019-07-
dc.identifier.issn2041-1723-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/6136-
dc.description.abstractThe large-scale crossbar array is a promising architecture for hardware-amenable energy efficient three-dimensional memory and neuromorphic computing systems. While accessing a memory cell with negligible sneak currents remains a fundamental issue in the crossbar array architecture, up-to-date memory cells for large-scale crossbar arrays suffer from process and device integration (one selector one resistor) or destructive read operation (complementary resistive switching). Here, we introduce a self-selective memory cell based on hexagonal boron nitride and graphene in a vertical heterostructure. Combining nonvolatile and volatile memory operations in the two hexagonal boron nitride layers, we demonstrate a self-selectivity of 10(10) with an on/off resistance ratio larger than 10(3). The graphene layer efficiently blocks the diffusion of volatile silver filaments to integrate the volatile and non-volatile kinetics in a novel way. Our self-selective memory minimizes sneak currents on large-scale memory operation, thereby achieving a practical readout margin for terabit-scale and energy-efficient memory integration. © The Author(s) 2019-
dc.description.uri1-
dc.language영어-
dc.publisherNATURE PUBLISHING GROUP-
dc.titleSelf-selective van der Waals heterostructures for large scale memory array-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000475852900004-
dc.identifier.scopusid2-s2.0-85069518499-
dc.identifier.rimsid69479-
dc.contributor.affiliatedAuthorJinbao Jiang-
dc.contributor.affiliatedAuthorYoung-Min Kim-
dc.identifier.doi10.1038/s41467-019-11187-9-
dc.identifier.bibliographicCitationNATURE COMMUNICATIONS, v.10, pp.3161-
dc.citation.titleNATURE COMMUNICATIONS-
dc.citation.volume10-
dc.citation.startPage3161-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordPlusNONVOLATILE-
dc.subject.keywordPlusTRANSITION-
dc.subject.keywordPlusPOWER-
dc.subject.keywordPlusFILM-
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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