Photogalvanic currents in dynamically gapped transition metal dichalcogenide monolayers

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Title
Photogalvanic currents in dynamically gapped transition metal dichalcogenide monolayers
Author(s)
Kovalev V.M.; Savenko I.G.
Publication Date
2019-02
Journal
PHYSICAL REVIEW B, v.99, no.7, pp.075405 -
Publisher
AMER PHYSICAL SOC
Abstract
We develop a microscopic theory of an unconventional photogalvanic effect in two-dimensional materials with the Dirac energy spectrum of the carriers of charge under strong driving. As a test bed, we consider a layer of a transition metal dichalcogenide, exposed to two different electromagnetic fields. The first pumping field is circularly polarized, and its frequency exceeds the material band gap. It creates an extremely nonequilibrium distribution of electrons and holes in one valley (K) and opens dynamical gaps, whereas the other valley (K′) remains empty due to the valley-dependent interband selection rules. The second probe field has the frequency much smaller than the material band gap. It generates intraband perturbations of the nonequilibrium carriers density, resulting in the photogalvanic current due to the trigonal asymmetry of the dispersions. This current shows thresholdlike behavior due to the dynamical gap opening and renormalizations of the density of states and velocity of quasiparticles. © 2019 American Physical Society
URI
https://pr.ibs.re.kr/handle/8788114/6026
ISSN
2469-9950
Appears in Collections:
Center for Theoretical Physics of Complex Systems(복잡계 이론물리 연구단) > Journal Papers (저널논문)
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