Fabrication of Stacked MoS 2 Bilayer with Weak Interlayer Coupling by Reduced Graphene Oxide Spacer
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hye MinOh | - |
dc.contributor.author | Hyojung Kim | - |
dc.contributor.author | Hyun Kim | - |
dc.contributor.author | Mun Seok Jeong | - |
dc.date.available | 2019-08-19T02:06:34Z | - |
dc.date.created | 2019-05-29 | - |
dc.date.issued | 2019-04 | - |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.uri | https://pr.ibs.re.kr/handle/8788114/5997 | - |
dc.description.abstract | © 2019, The Author(s). We fabricated the stacked bilayer molybdenum disulfide (MoS 2 ) by using reduced graphene oxide (rGO) as a spacer for increasing the optoelectronic properties of MoS 2 . The rGO can decrease the interlayer coupling between the stacked bilayer MoS 2 and retain the direct band gap property of MoS 2 . We observed a twofold enhancement of the photoluminescence intensity of the stacked MoS 2 bilayer. In the Raman scattering, we observed that the E 1 2g and A 1g modes of the stacked bilayer MoS 2 with rGO were further shifted compared to monolayer MoS 2 , which is due to the van der Waals (vdW) interaction and the strain effect between the MoS 2 and rGO layers. The findings of this study will expand the applicability of monolayer MoS 2 for high-performance optoelectronic devices by enhancing the optical properties using a vdW spacer | - |
dc.description.uri | 1 | - |
dc.language | 영어 | - |
dc.publisher | NATURE PUBLISHING GROUP | - |
dc.title | Fabrication of Stacked MoS 2 Bilayer with Weak Interlayer Coupling by Reduced Graphene Oxide Spacer | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.identifier.wosid | 000464094200007 | - |
dc.identifier.scopusid | 2-s2.0-85064160124 | - |
dc.identifier.rimsid | 68062 | - |
dc.contributor.affiliatedAuthor | Hyun Kim | - |
dc.contributor.affiliatedAuthor | Mun Seok Jeong | - |
dc.identifier.doi | 10.1038/s41598-019-42446-w | - |
dc.identifier.bibliographicCitation | SCIENTIFIC REPORTS, v.9, pp.5900 | - |
dc.citation.title | SCIENTIFIC REPORTS | - |
dc.citation.volume | 9 | - |
dc.citation.startPage | 5900 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | MONOLAYER MOS2 | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | RAMAN | - |
dc.subject.keywordPlus | WS2 | - |
dc.subject.keywordPlus | SPECTROSCOPY | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | EVOLUTION | - |